Wide-Bandgap High-Mobility Zno Thin-Film Transistors Produced at Room Temperature

AuthID
 P-000-8G2
7
Author(s)
Tipo de Documento
Article
Year published
2004
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 85, Número: 13, Páginas: 2541-2543 (3)
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Publication Identifiers
SCOPUS: 2-s2.0-7544247006
Wos: WOS:000224178300031
Source Identifiers
ISSN: 0003-6951
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