Effect of Gallium Doping on Structural and Transport Properties of the Topological Insulator Bi2Se3 Grown by Molecular Beam Epitaxy

AuthID
P-00X-9RT
9
Author(s)
Brito, D
·
Perez-Rodriguez, A
·
Khatri, I
·
Diez, E
·
Sadewasser, S
·
Claro, MS
Tipo de Documento
Article
Year published
2022
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 132, Número: 11, Páginas: 115107 (10)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-85138764495
Unpaywall: 10.1063/5.0107004
Wos: WOS:000874941900005
Source Identifiers
ISSN: 0021-8979
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