Electrospun Stacked Dual-Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

AuthID
 P-00X-M0H
6
Author(s)
He, B
·
He, G
·
Jiang, SS
·
Liu, JW
·
Martins, R
Tipo de Documento
Article in Press
Year published
2022
Publicado
in ADVANCED ELECTRONIC MATERIALS, ISSN: 2199-160X
Volume: 9, Número: 2
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Publication Identifiers
SCOPUS: 2-s2.0-85143969350
Wos: WOS:000893536700001
Source Identifiers
ISSN: 2199-160X
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