Low-Temperature Processed Schottky-Gated Field-Effect Transistors Based on Amorphous Gallium-Indium-Zinc-Oxide Thin Films

AuthID
 P-003-03H
8
Author(s)
Lorenz, M
·
Lajn, A
·
Frenzel, H
·
Grundmann, M
·
Tipo de Documento
Article
Year published
2010
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 97, Número: 24, Páginas: 243506 (3)
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Publication Identifiers
SCOPUS: 2-s2.0-78650352232
Wos: WOS:000285481000086
Source Identifiers
ISSN: 0003-6951
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