Energy-Band Engineering by 2D Mxene Doping for High-Performance Homojunction Transistors and Logic Circuits

AuthID
 P-00Y-AG7
7
Author(s)
Wang, LN
·
He, G
·
Wang, WH
·
Xu, XF
·
Jiang, SS
·
Martins, R
Tipo de Documento
Article
Year published
2023
Publicado
in JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, ISSN: 1005-0302
Volume: 159, Páginas: 41-51 (11)
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Publication Identifiers
SCOPUS: 2-s2.0-85152620170
Wos: WOS:000983622200001
Source Identifiers
ISSN: 1005-0302
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