Zinc Concentration Dependence Study of Solution Processed Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-K Dielectric

AuthID
 P-003-17A
7
Author(s)
Hong, Y
·
Tipo de Documento
Article
Year published
2010
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 97, Número: 18, Páginas: 183504 (3)
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Publication Identifiers
SCOPUS: 2-s2.0-78649237787
Wos: WOS:000283934100074
Source Identifiers
ISSN: 0003-6951
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