111
TITLE: Effect of the discharge frequency and impedance on the structural properties of polymorphous silicon  Full Text
AUTHORS: Aguas, H ; Raniero, L; Pereira, L ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on Thin Film and Nono-Structured Materials for Photovoltaics in THIN SOLID FILMS, VOLUME: 451
INDEXED IN: Scopus WOS
112
TITLE: Effect of the tunnelling oxide thickness and density on the performance of MIS photodiodes  Full Text
AUTHORS: Aguas, H ; Goullet, A; Pereira, L ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on Thin Film and Nono-Structured Materials for Photovoltaics in THIN SOLID FILMS, VOLUME: 451
INDEXED IN: Scopus WOS
113
TITLE: Flexible position sensitive photodetectors based on a-Si : H hetero structures  Full Text
AUTHORS: Fortunato, E ; Pereira, L ; Aguas, H ; Ferreira, I; Martins, R ;
PUBLISHED: 2004, SOURCE: SENSORS AND ACTUATORS A-PHYSICAL, VOLUME: 116, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
114
TITLE: Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz
AUTHORS: Raniero, L; Martins, R ; Aguas, H ; Zang, S; Ferreira, I ; Pereira, L ; Fortunato, E ; Boufendi, L;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
115
TITLE: High field-effect mobility zinc oxide thin film transistors produced at room temperature  Full Text
AUTHORS: Fortunato, E ; Pimentel, A ; Pereira, L ; Goncalves, A; Lavareda, G ; Aguas, H ; Ferreira, I ; Carvalho, CN ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338
INDEXED IN: WOS
116
TITLE: High field-effect mobility zinc oxide thin film transistors produced at room temperature  Full Text
AUTHORS: Fortunato, E ; Pimentel, A ; Pereira, L ; Goncalves, A; Lavareda, G ; Aguas, H ; Ferreira, I ; Carvalho, CN ; Martins, R ;
PUBLISHED: 2004, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 338-340, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus CrossRef
IN MY: ORCID
117
TITLE: High quality conductive gallium-doped zinc oxide films deposited at room temperature  Full Text
AUTHORS: Fortunato, E ; Assuncao, V; Goncalves, A; Marques, A; Aguas, H ; Pereira, L ; Ferreira, I ; Vilarinho, P ; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on Thin Film and Nano-Structured Materials for Photovoltaics in THIN SOLID FILMS, VOLUME: 451
INDEXED IN: Scopus WOS CrossRef
118
TITLE: In-situ GIXRD characterization of the crystallization of Ni-Ti sputtered thin films
AUTHORS: Martins, RMS ; Silva, RJC ; Fernandes, FMB ; Pereira, L ; Gordo, PR; Maneira, MJP; Schell, N;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID
119
TITLE: Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering  Full Text
AUTHORS: Barquinha, P ; Pereira, L ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on New Materials in Future Silicon Technology Held at the E-MAR 2004 Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 7, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef
120
TITLE: MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge
AUTHORS: Aguas, H ; Pereira, L ; Raniero, L; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
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