Sérgio Manuel de Sousa Pereira


AuthID: R-000-GF5

Confirmed Publications: 72



41
TITLE: Optical active centres in ZnO samples  Full Text
AUTHORS: Monteiro, T ; Soares, MJ ; Neves, A ; Pereira, S ; Correia, MR ; Peres, M; Alves, E ; Rogers, D; Teherani, F; Munoz SanJose, V; Trindade, T ; Pereira, A ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
INDEXED IN: Scopus WOS CrossRef: 11
IN MY: ORCID
42
TITLE: Optical studies on a coherent InGaN/GaN layer  Full Text
AUTHORS: Correia, MR ; Pereira, S ; Alves, E ; Arnaudov, B;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
43
TITLE: Structural and optical characterization of light emitting InGaN/GaN epitaxial layers
AUTHORS: Pereira, S ; Correia, MR ; Alves, E ;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 1
INDEXED IN: Scopus WOS
IN MY: ORCID
44
TITLE: Absolute scale reciprocal space mapping on X-ray diffractometers incorporating a position sensitive detector: Application to III-nitride semiconductors
AUTHORS: Franco, N; Pereira, S ; Sequeira, AD;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
IN MY: ORCID
45
TITLE: Direct evidence for strain inhomogeneity in InxGa1-xN epilayers by Raman spectroscopy  Full Text
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Watson, IM; Liu, C; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 85, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef: 16
IN MY: ORCID
46
TITLE: Optical studies on the red luminescence of InGaN epilayers  Full Text
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Ferreira, RAS ; Frandon, J; Alves, E ; Watson, IM; Liu, C; Morel, A; Gil, B;
PUBLISHED: 2004, SOURCE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef: 6
IN MY: ORCID
47
TITLE: Roughness in GaN/InGaN films and multilayers determined with Rutherford backscattering  Full Text
AUTHORS: Barradas, NP ; Alves, E ; Pereira, S ; Shvartsman, VV; Kholkin, AL ; Pereira, E; O'Donnell, KP; Liu, C; Deatcher, CJ; Watson, IM; Mayer, M;
PUBLISHED: 2004, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 217, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 28
IN MY: ORCID
48
TITLE: Annealing behavior and lattice site location of Er implanted InGaN  Full Text
AUTHORS: Alves, E ; Wahl, U ; Correia, MR ; Pereira, S ; De Vries, B; Vantomme, A;
PUBLISHED: 2003, SOURCE: 13th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 206
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
49
TITLE: In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures  Full Text
AUTHORS: Deatcher, CJ; Liu, C; Pereira, S ; Lada, M; Cullis, AG; Sun, YJ; Brandt, O; Watson, IM;
PUBLISHED: 2003, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 18, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
50
TITLE: Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared Spectroscopic Ellipsometry  Full Text
AUTHORS: Kasic, A; Schubert, M; Off, J; Kuhn, B; Scholz, F; Einfeldt, S; Bottcher, T; Hommel, D; As, DJ; Kohler, U; Dadgar, A; Krost, A; Saito, Y; Nanishi, Y; Correia, MR ; Pereira, S ; Darakchieva, V; Monemar, B; Amano, H; Akasaki, I; Wagner, G; ...More
PUBLISHED: 2003, SOURCE: Physica Status Solidi C: Conferences, ISSUE: 6 SPEC. ISS.
INDEXED IN: Scopus CrossRef: 13
IN MY: ORCID
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