Sérgio Manuel de Sousa Pereira


AuthID: R-000-GF5

Confirmed Publications: 72



51
TITLE: Raman study of the A(1)(LO) phonon in relaxed and pseudomorphic InGaN epilayers  Full Text
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Alves, E ;
PUBLISHED: 2003, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 83, ISSUE: 23
INDEXED IN: Scopus WOS CrossRef: 37
IN MY: ORCID
52
TITLE: Wishful physics - some common misconceptions about InGaN  Full Text
AUTHORS: O'Donnell, KP; Pereira, S ; Martin, RW; Edwards, PR; Tobin, MJ; Mosselmans, JFW;
PUBLISHED: 2003, SOURCE: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 195, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
53
TITLE: Analysis of strain depth variations in an In(0.19)Ga(0.81)N layer by Raman spectroscopy  Full Text
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Renucci, MA; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 6
IN MY: ORCID
54
TITLE: Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID
55
TITLE: Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing  Full Text
AUTHORS: Pereira, S ; Pereira, E; Alves, E ; Barradas, NP ; O'Donnell, KP; Liu, C; Deatcher, CJ; Watson, IM;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef: 12
IN MY: ORCID
56
TITLE: Interpretation of double x-ray diffraction peaks from InGaN layers (vol 79, pg 1432, 2001)  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 2
INDEXED IN: Scopus WOS
57
TITLE: Photoluminescence excitation spectroscopy of InGaN epilayers  Full Text
AUTHORS: White, ME; O'Donnell, KP; Martin, RW; Pereira, S ; Deatcher, CJ; Watson, IM;
PUBLISHED: 2002, SOURCE: Spring Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 93, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
58
TITLE: Preliminary investigations of infrared Er-related photoluminescence in ion-implanted In0.07Ga0.93N  Full Text
AUTHORS: Correia, MR ; Pereira, S ; Cavaco, A; Pereira, E; Alves, E ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 24
INDEXED IN: Scopus WOS CrossRef: 6
IN MY: ORCID
59
TITLE: Splitting of X-ray diffraction and photoluminescence peaks in InGaN/GaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Martin, RW; White, ME; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Spring Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 93, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef: 12
IN MY: ORCID
60
TITLE: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N; Watson, IM; Deatcher, CJ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 21
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
Page 6 of 8. Total results: 72.

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