Maria Eduarda da Cunha Pereira
AuthID: R-000-B9J
241
TITLE: Strain relaxation and compositional analysis of InGaN/GaN layers by Rutherford backscattering Full Text
AUTHORS: Alves, E ; Pereira, S ; Correia, MR ; Pereira, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, ISSUE: 1-4
AUTHORS: Alves, E ; Pereira, S ; Correia, MR ; Pereira, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, ISSUE: 1-4
242
TITLE: Interpretation of double x-ray diffraction peaks from InGaN layers (vol 79, pg 1432, 2001) Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 2
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 2
INDEXED IN: 
Scopus 
WOS
Scopus WOS243
TITLE: Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
244
TITLE: Low temperature photoluminescence, transient photoconductivity and microwave reflection for optical properties and transport in PLD-GaN Full Text
AUTHORS: Niehus, M; Sanguino, P; Schwarz, R ; Monteiro, T ; Soares, MJ ; Pereira, E; Kunst, M; Koynov, S;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
AUTHORS: Niehus, M; Sanguino, P; Schwarz, R ; Monteiro, T ; Soares, MJ ; Pereira, E; Kunst, M; Koynov, S;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
245
TITLE: Analysis of strain depth variations in an In(0.19)Ga(0.81)N layer by Raman spectroscopy Full Text
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Renucci, MA; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Renucci, MA; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
246
TITLE: Compositional pulling effects in InxGa1-x/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ;
PUBLISHED: 2001, SOURCE: PHYSICAL REVIEW B, VOLUME: 64, ISSUE: 20
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ;
PUBLISHED: 2001, SOURCE: PHYSICAL REVIEW B, VOLUME: 64, ISSUE: 20
247
TITLE: Depth resolved studies of indium content and strain in InGaN layers Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ; Sequeira, AD; Franco, N; Watson, IM;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ; Sequeira, AD; Franco, N; Watson, IM;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
248
TITLE: Indium distribution within InxGa1-xN epitaxial layers: A combined resonant Raman scattering and Rutherford backscattering study Full Text
AUTHORS: Correia, R; Pereira, S ; Pereira, E; Alves, E ; Gleize, J; Frandon, J; Renucci, MA;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
AUTHORS: Correia, R; Pereira, S ; Pereira, E; Alves, E ; Gleize, J; Frandon, J; Renucci, MA;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
249
TITLE: Determination of biaxial modulus of chemical vapor-deposited diamond films Full Text
AUTHORS: Fan, QH; Gracio, J ; Pereira, E; Teixeirae, V ; Tavares, CJ ;
PUBLISHED: 2001, SOURCE: 28th International Conference on Metallurgical Coatings and Thin Films in THIN SOLID FILMS, VOLUME: 398
AUTHORS: Fan, QH; Gracio, J ; Pereira, E; Teixeirae, V ; Tavares, CJ ;
PUBLISHED: 2001, SOURCE: 28th International Conference on Metallurgical Coatings and Thin Films in THIN SOLID FILMS, VOLUME: 398
250
TITLE: Deflation for block eigenvalues of block partitioned matrices with an application to matrix polynomials of commuting matrices Full Text
AUTHORS: Pereira, E; Vitoria, J;
PUBLISHED: 2001, SOURCE: 8th International Conference on Numerical Methods and Computational Mechanics (NMCM98) in COMPUTERS & MATHEMATICS WITH APPLICATIONS, VOLUME: 42, ISSUE: 8-9
AUTHORS: Pereira, E; Vitoria, J;
PUBLISHED: 2001, SOURCE: 8th International Conference on Numerical Methods and Computational Mechanics (NMCM98) in COMPUTERS & MATHEMATICS WITH APPLICATIONS, VOLUME: 42, ISSUE: 8-9
