241
TITLE: Preliminary investigations of infrared Er-related photoluminescence in ion-implanted In0.07Ga0.93N  Full Text
AUTHORS: Correia, MR ; Pereira, S ; Cavaco, A; Pereira, E; Alves, E ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 24
INDEXED IN: Scopus WOS CrossRef: 6
242
TITLE: Splitting of X-ray diffraction and photoluminescence peaks in InGaN/GaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Martin, RW; White, ME; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Spring Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 93, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef: 12
243
TITLE: Strain relaxation and compositional analysis of InGaN/GaN layers by Rutherford backscattering  Full Text
AUTHORS: Alves, E ; Pereira, S ; Correia, MR ; Pereira, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef: 8
244
TITLE: Interpretation of double x-ray diffraction peaks from InGaN layers (vol 79, pg 1432, 2001)  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 2
INDEXED IN: Scopus WOS
245
TITLE: Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 3
246
TITLE: Low temperature photoluminescence, transient photoconductivity and microwave reflection for optical properties and transport in PLD-GaN  Full Text
AUTHORS: Niehus, M; Sanguino, P; Schwarz, R ; Monteiro, T ; Soares, MJ ; Pereira, E; Kunst, M; Koynov, S;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
247
TITLE: Analysis of strain depth variations in an In(0.19)Ga(0.81)N layer by Raman spectroscopy  Full Text
AUTHORS: Correia, MR ; Pereira, S ; Pereira, E; Frandon, J; Renucci, MA; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 6
248
TITLE: Compositional pulling effects in InxGa1-x/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ;
PUBLISHED: 2001, SOURCE: PHYSICAL REVIEW B, VOLUME: 64, ISSUE: 20
INDEXED IN: Scopus WOS CrossRef: 128
249
TITLE: Depth resolved studies of indium content and strain in InGaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Trager Cowan, C; Sweeney, F; Alves, E ; Sequeira, AD; Franco, N; Watson, IM;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 3
250
TITLE: Indium distribution within InxGa1-xN epitaxial layers: A combined resonant Raman scattering and Rutherford backscattering study  Full Text
AUTHORS: Correia, R; Pereira, S ; Pereira, E; Alves, E ; Gleize, J; Frandon, J; Renucci, MA;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1
Page 25 of 33. Total results: 329.