161
TITLE: Optoelectronic properties of high-gap amorphous silicon-carbon alloys
AUTHORS: Chu, V; Conde, JP ; Brogueira, P ; Micaelo, P; Jarego, JP; da Silva, MF; Soares, JC ;
PUBLISHED: 1995, SOURCE: Proceedings of the 1995 MRS Spring Meeting in Materials Research Society Symposium - Proceedings, VOLUME: 377
INDEXED IN: Scopus
IN MY: ORCID
162
TITLE: Amorphous-to-microcrystalline silicon transition in hot-wire chemical vapor deposition
AUTHORS: Brogueira, P ; Chu, V; Conde, JP ;
PUBLISHED: 1995, SOURCE: Proceedings of the 1995 MRS Spring Meeting in Materials Research Society Symposium - Proceedings, VOLUME: 377
INDEXED IN: Scopus
IN MY: ORCID
163
TITLE: Low filament temperature deposition of a-Si:H by hot-wire chemical vapor deposition  Full Text
AUTHORS: Brogueira, P; Conde, JP; Arekat, S; Chu, V;
PUBLISHED: 1995, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 78, ISSUE: 6
INDEXED IN: CrossRef
IN MY: ORCID
164
TITLE: Transport and photoluminescence of hydrogenated amorphous silicon–carbon alloys  Full Text
AUTHORS: Chu, V; Conde, JP; Jarego, J; Brogueira, P; Rodriguez, J; Barradas, N; Soares, JC;
PUBLISHED: 1995, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 78, ISSUE: 5
INDEXED IN: CrossRef
IN MY: ORCID
165
TITLE: HIGH-GROWTH RATE A-SIH DEPOSITED BY HOT-WIRE CVD
AUTHORS: BROGUEIRA, P; CHU, V; CONDE, JP;
PUBLISHED: 1994, SOURCE: Symposium on Amorphous Silicon Technology, at the 1994 MRS Spring Meeting in AMORPHOUS SILICON TECHNOLOGY-1994, VOLUME: 336
INDEXED IN: Scopus WOS
IN MY: ORCID
166
TITLE: PROPERTIES OF AMORPHOUS SILICON/AMORPHOUS SILICON-GERMANIUM MULTILAYERS  Full Text
AUTHORS: CONDE, JP ; CHU, V; SHEN, DS; WAGNER, S;
PUBLISHED: 1994, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 75, ISSUE: 3
INDEXED IN: Scopus WOS
IN MY: ORCID
167
TITLE: Properties of amorphous silicon/amorphous silicon-germanium multilayers  Full Text
AUTHORS: Conde, JP; Chu, V; Shen, DS; Wagner, S;
PUBLISHED: 1994, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 75, ISSUE: 3
INDEXED IN: CrossRef
IN MY: ORCID
168
TITLE: Carrier lifetime in amorphous semiconductors  Full Text
AUTHORS: Shen, DS; Conde, JP; Chu, V; Wagner, S;
PUBLISHED: 1994, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 75, ISSUE: 11
INDEXED IN: CrossRef
IN MY: ORCID
169
TITLE: ANNEALING KINETICS OF A-SI-H DEPOSITED BY CONCENTRIC-ELECTRODE RF GLOW-DISCHARGE AT ROOM-TEMPERATURE  Full Text
AUTHORS: CONDE, JP ; CHAN, KK; BLUM, JM; ARIENZO, M; MONTEIRO, PA; FERREIRA, JA; CHU, V; WYRSH, N;
PUBLISHED: 1993, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 73, ISSUE: 4
INDEXED IN: Scopus WOS
IN MY: ORCID
170
TITLE: Annealing kinetics of a-Si:H deposited by concentric-electrode rf glow discharge at room temperature  Full Text
AUTHORS: Conde, JP; Chan, KK; Blum, JM; Arienzo, M; Monteiro, PA; Ferreira, JA; Chu, V; Wyrsh, N;
PUBLISHED: 1993, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 73, ISSUE: 4
INDEXED IN: CrossRef
IN MY: ORCID
Page 17 of 22. Total results: 213.