E. Wendler
AuthID: R-006-NPS
1
TITLE: Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
2
TITLE: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing Full Text
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Magalhaes, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; O'Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: NANOTECHNOLOGY, VOLUME: 26, ISSUE: 42
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Magalhaes, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; O'Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: NANOTECHNOLOGY, VOLUME: 26, ISSUE: 42
INDEXED IN: Scopus WOS
3
TITLE: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Wendler, E; Magalhães, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; García, R; O’Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: Nanotechnology, VOLUME: 26, ISSUE: 42
AUTHORS: Redondo-Cubero, A; Lorenz, K; Wendler, E; Magalhães, S; Alves, E; Carvalho, D; Ben, T; Morales, FM; García, R; O’Donnell, KP; Wetzel, C;
PUBLISHED: 2015, SOURCE: Nanotechnology, VOLUME: 26, ISSUE: 42
INDEXED IN: CrossRef
4
TITLE: EndoTOFPET-US: a novel multimodal tool for endoscopy and positron emission tomography
AUTHORS: Aubry, N; Auffray, E; Mimoun, FB; Brillouet, N; Bugalho, R; Charbon, E; Charles, O; Cortinovis, D; Courday, P; Cserkaszky, A; Damon, C; Doroud, K; M Fischer; Fornaro, G; M Fourmigue; Frisch, B; Fuerst, B; Gardiazabal, J; Gadow, K; Garutti, E; ...More
PUBLISHED: 2013, SOURCE: 14th International Workshop on Radiation Imaging Detectors in JOURNAL OF INSTRUMENTATION, VOLUME: 8, ISSUE: 4
AUTHORS: Aubry, N; Auffray, E; Mimoun, FB; Brillouet, N; Bugalho, R; Charbon, E; Charles, O; Cortinovis, D; Courday, P; Cserkaszky, A; Damon, C; Doroud, K; M Fischer; Fornaro, G; M Fourmigue; Frisch, B; Fuerst, B; Gardiazabal, J; Gadow, K; Garutti, E; ...More
PUBLISHED: 2013, SOURCE: 14th International Workshop on Radiation Imaging Detectors in JOURNAL OF INSTRUMENTATION, VOLUME: 8, ISSUE: 4
5
TITLE: Comparison of low- and room-temperature damage formation in Ar ion implanted GaN and ZnO Full Text
AUTHORS: Wendler, E; Wesch, W; Yu. Y Azarov; Catarino, N; Redondo Cubero, A; Alves, E ; Lorenz, K ;
PUBLISHED: 2013, SOURCE: 18th International Conference on Ion Beam Modifications of Materials (IBMM) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 307
AUTHORS: Wendler, E; Wesch, W; Yu. Y Azarov; Catarino, N; Redondo Cubero, A; Alves, E ; Lorenz, K ;
PUBLISHED: 2013, SOURCE: 18th International Conference on Ion Beam Modifications of Materials (IBMM) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 307
6
TITLE: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures Full Text
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: NANOTECHNOLOGY, VOLUME: 24, ISSUE: 50
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: NANOTECHNOLOGY, VOLUME: 24, ISSUE: 50
INDEXED IN: Scopus WOS
7
TITLE: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; García, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: Nanotechnology, VOLUME: 24, ISSUE: 50
AUTHORS: Redondo-Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; García, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: Nanotechnology, VOLUME: 24, ISSUE: 50
INDEXED IN: CrossRef
8
TITLE: Radiation damage formation and annealing in GaN and ZnO
AUTHORS: Lorenz, K ; Peres, M; Franco, N; Marques, JG ; Miranda, SMC; Magalhaes, S; Monteiro, T ; Wesch, W; Alves, E ; Wendler, E;
PUBLISHED: 2011, SOURCE: Conference on Oxide-based Materials and Devices II in OXIDE-BASED MATERIALS AND DEVICES II, VOLUME: 7940
AUTHORS: Lorenz, K ; Peres, M; Franco, N; Marques, JG ; Miranda, SMC; Magalhaes, S; Monteiro, T ; Wesch, W; Alves, E ; Wendler, E;
PUBLISHED: 2011, SOURCE: Conference on Oxide-based Materials and Devices II in OXIDE-BASED MATERIALS AND DEVICES II, VOLUME: 7940
INDEXED IN: Scopus WOS
9
TITLE: Radiation damage in ZnO ion implanted at 15 K Full Text
AUTHORS: Wendler, E; Bilani, O; Gaertner, K; Wesch, W; Hayes, M; Auret, FD; Lorenz, K ; Alves, E ;
PUBLISHED: 2009, SOURCE: 23rd International Conference on Atomic Collisions in Solids in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 267, ISSUE: 16
AUTHORS: Wendler, E; Bilani, O; Gaertner, K; Wesch, W; Hayes, M; Auret, FD; Lorenz, K ; Alves, E ;
PUBLISHED: 2009, SOURCE: 23rd International Conference on Atomic Collisions in Solids in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 267, ISSUE: 16
10
TITLE: Damage formation and annealing at low temperatures in ion implanted ZnO Full Text
AUTHORS: Lorenz, K ; Alves, E ; Wendler, E; Bilani, O; Wesch, W; Hayes, M;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 19
AUTHORS: Lorenz, K ; Alves, E ; Wendler, E; Bilani, O; Wesch, W; Hayes, M;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 19