E. Janzen
AuthID: R-006-RKX
1
TITLE: Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures Full Text
AUTHORS: Hofmann, T; Kuehne, P; Schoeche, S; Jr Tai Chen; Forsberg, U; Janzen, E; Ben Sedrine, N; Herzinger, CM; Woollam, JA; Schubert, M; Darakchieva, V;
PUBLISHED: 2012, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 101, ISSUE: 19
AUTHORS: Hofmann, T; Kuehne, P; Schoeche, S; Jr Tai Chen; Forsberg, U; Janzen, E; Ben Sedrine, N; Herzinger, CM; Woollam, JA; Schubert, M; Darakchieva, V;
PUBLISHED: 2012, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 101, ISSUE: 19
2
TITLE: Effect of impurity incorporation on crystallization in AlN sublimation epitaxy Full Text
AUTHORS: Kakanakova Georgieva, A; Gueorguiev, GK; Yakimova, R; Janzen, E;
PUBLISHED: 2004, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 96, ISSUE: 9
AUTHORS: Kakanakova Georgieva, A; Gueorguiev, GK; Yakimova, R; Janzen, E;
PUBLISHED: 2004, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 96, ISSUE: 9
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