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TITLE: Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities  Full Text
AUTHORS: De Vries, B; Wahl, U ; Ruffenach, S; Briot, O; Vantomme, A;
PUBLISHED: 2013, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 103, ISSUE: 17
INDEXED IN: Scopus WOS CrossRef
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TITLE: High temperature annealing of rare earth implanted GaN films: Structural and optical properties  Full Text
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Wojdak, M; Braud, A; Monteiro, T ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7
INDEXED IN: Scopus WOS CrossRef: 39
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TITLE: Optical properties of high-temperature annealed Eu-implanted GaN  Full Text
AUTHORS: Wang, K; Martin, RW; Nogales, E; Katchkanov, V; O'Donnell, KP; Hernandez, S; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7
INDEXED IN: Scopus WOS CrossRef
4
TITLE: Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing  Full Text
AUTHORS: Nogales, E; Martin, RW; O'Donnell, KP; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
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TITLE: Selectively excited photoluminescence from Eu-implanted GaN  Full Text
AUTHORS: Wang, K; Martin, RW; O'Donnell, KP; Katchkanov, V; Nogales, E; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef
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TITLE: The atomic structure of defects formed during doping of GaN with rare earth ions  Full Text
AUTHORS: Wojtowicz, T; Ruterana, P; Lorenz, K ; Wahl, U ; Alves, E ; Ruffenach, S; Halambalakis, G; Briot, O;
PUBLISHED: 2005, SOURCE: Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting in E-MRS 2004 Fall Meeting Symposia C and F, VOLUME: 2, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
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TITLE: High-temperature annealing and optical activation of Eu-implanted GaN  Full Text
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 85, ISSUE: 14
INDEXED IN: Scopus WOS CrossRef
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TITLE: Amorphisation of GaN during processing with rare earth ion beams  Full Text
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLISHED: 2004, SOURCE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef
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TITLE: Processing of rare earth doped GaN with ion beams
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O; Vantomme, A;
PUBLISHED: 2003, SOURCE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
INDEXED IN: Scopus WOS