Sérgio Nuno Canteiro de Magalhães
AuthID: R-001-JX8
1
TITLE: MROX 2.0: a software tool to explore quantum heterostructures by combining X-ray reflectivity and diffraction Full Text
AUTHORS: Magalhaes, S.; Cachim, C.; Correia, P. D.; Oliveira, F.; Cerqueira, F.; Sajkowski, J. M.; Stachowicz, M.;
PUBLISHED: 2023, SOURCE: CRYSTENGCOMM
AUTHORS: Magalhaes, S.; Cachim, C.; Correia, P. D.; Oliveira, F.; Cerqueira, F.; Sajkowski, J. M.; Stachowicz, M.;
PUBLISHED: 2023, SOURCE: CRYSTENGCOMM
INDEXED IN: 
WOS
WOS2
TITLE: Multiple reflection optimization package for X-ray diffraction Full Text
AUTHORS: Magalhaes, S; Cabaco, JS; Araujo, JP; Alves, E;
PUBLISHED: 2021, SOURCE: CRYSTENGCOMM
AUTHORS: Magalhaes, S; Cabaco, JS; Araujo, JP; Alves, E;
PUBLISHED: 2021, SOURCE: CRYSTENGCOMM
INDEXED IN: WOS
WOS3
TITLE: Promoting Third Graders' Executive Functions and Literacy: A Pilot Study Examining the Benefits of Mindfulness vs. Relaxation Training Full Text
AUTHORS: Cordeiro, C; Magalhaes, S; Rocha, R; Mesquita, A; Olive, T; Castro, SL ; Limpo, T;
PUBLISHED: 2021, SOURCE: FRONTIERS IN PSYCHOLOGY, VOLUME: 12
AUTHORS: Cordeiro, C; Magalhaes, S; Rocha, R; Mesquita, A; Olive, T; Castro, SL ; Limpo, T;
PUBLISHED: 2021, SOURCE: FRONTIERS IN PSYCHOLOGY, VOLUME: 12
4
TITLE: Validation of a low-cost selective powder deposition process through the characterization of tin bronze specimens
AUTHORS: Magalhaes, S; Sardinha, M; Vicente, C; Leite, M; Ribeiro, R; Vaz, M; Reis, L;
PUBLISHED: 2021, SOURCE: PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART L-JOURNAL OF MATERIALS-DESIGN AND APPLICATIONS
AUTHORS: Magalhaes, S; Sardinha, M; Vicente, C; Leite, M; Ribeiro, R; Vaz, M; Reis, L;
PUBLISHED: 2021, SOURCE: PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART L-JOURNAL OF MATERIALS-DESIGN AND APPLICATIONS
INDEXED IN: WOS
WOS5
TITLE: Engineering strain and conductivity of MoO3 by ion implantation (vol 169, pg 15, 2019) Full Text
AUTHORS: Daniela R Pereira; Carlos Diaz Guerra; Marco Peres; Sergio Magalhaes; Joao G Correia; Jose G Marques; Ana G Silva; Eduardo Alves; Katharina Lorenz;
PUBLISHED: 2020, SOURCE: ACTA MATERIALIA, VOLUME: 199
AUTHORS: Daniela R Pereira; Carlos Diaz Guerra; Marco Peres; Sergio Magalhaes; Joao G Correia; Jose G Marques; Ana G Silva; Eduardo Alves; Katharina Lorenz;
PUBLISHED: 2020, SOURCE: ACTA MATERIALIA, VOLUME: 199
INDEXED IN: WOS
WOS6
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates Full Text
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
INDEXED IN: WOS
WOS7
TITLE: Effect of AlN content on the lattice site location of terbium ions in AlxGa1-xN compounds Full Text
AUTHORS: Fialho, M; Rodrigues, J; Magalhaes, S; Correia, MR; Monteiro, T; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 3
AUTHORS: Fialho, M; Rodrigues, J; Magalhaes, S; Correia, MR; Monteiro, T; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 3
8
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N Full Text
AUTHORS: Magalhaes, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 13
AUTHORS: Magalhaes, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 13
INDEXED IN: WOS
WOS9
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N
AUTHORS: Magalha∼es, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 49, ISSUE: 13
AUTHORS: Magalha∼es, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 49, ISSUE: 13
INDEXED IN: 
Scopus
Scopus10
TITLE: Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
