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TITLE: Evaluation of the infrared absorption in nm-thick heavily boron-doped Si1-xGex layers on silicon  Full Text
AUTHORS: Cavaco, A; Sobolev, NA; Carmo, MC; Presting, H; Konig, U;
PUBLISHED: 2001, SOURCE: 3rd International Conference on Materials in Microelectronics in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 12, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef