Hugo Manuel Brito Águas
AuthID: R-000-61B
131
TITLE: Effect of the discharge frequency and impedance on the structural properties of polymorphous silicon Full Text
AUTHORS: Águas, H; Raniero, L; Pereira, L; Fortunato, E; Martins, R;
PUBLISHED: 2004, SOURCE: Thin Solid Films, VOLUME: 451-452
AUTHORS: Águas, H; Raniero, L; Pereira, L; Fortunato, E; Martins, R;
PUBLISHED: 2004, SOURCE: Thin Solid Films, VOLUME: 451-452
132
TITLE: Effect of Annealing on Gold Rectifying Contacts in Amorphous Silicon
AUTHORS: Hugo Águas; Luís Pereira; Isabel Ferreira; A.R Ramos; A.S Viana; Andreu, J; Paula M Vilarinho; Elvira Fortunato; Rodrigo Martins;
PUBLISHED: 2004, SOURCE: Materials Science Forum, VOLUME: 455-456
AUTHORS: Hugo Águas; Luís Pereira; Isabel Ferreira; A.R Ramos; A.S Viana; Andreu, J; Paula M Vilarinho; Elvira Fortunato; Rodrigo Martins;
PUBLISHED: 2004, SOURCE: Materials Science Forum, VOLUME: 455-456
133
TITLE: Silicon Etching in CF<sub>4</sub>/O<sub>2</sub> and SF<sub>6</sub> Atmospheres
AUTHORS: Silva, A; Leandro Raniero; Ferreira, E; Hugo Águas; Luís Pereira; Elvira Fortunato; Rodrigo Martins;
PUBLISHED: 2004, SOURCE: Materials Science Forum, VOLUME: 455-456
AUTHORS: Silva, A; Leandro Raniero; Ferreira, E; Hugo Águas; Luís Pereira; Elvira Fortunato; Rodrigo Martins;
PUBLISHED: 2004, SOURCE: Materials Science Forum, VOLUME: 455-456
134
TITLE: MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge
AUTHORS: Hugo Águas; Luís Pereira; Leandro Raniero; Elvira Fortunato; Rodrigo Martins;
PUBLISHED: 2004, SOURCE: Materials Science Forum, VOLUME: 455-456
AUTHORS: Hugo Águas; Luís Pereira; Leandro Raniero; Elvira Fortunato; Rodrigo Martins;
PUBLISHED: 2004, SOURCE: Materials Science Forum, VOLUME: 455-456
135
TITLE: Polymorphous Silicon Films Deposited at 27.12 MHz
AUTHORS: Martins, R; Aguas, H; Ferreira, I; Fortunato, E; Lebib, S; Roca i Cabarrocas, P; Guimaraes, L;
PUBLISHED: 2003, SOURCE: Advanced Materials, VOLUME: 15, ISSUE: 24
AUTHORS: Martins, R; Aguas, H; Ferreira, I; Fortunato, E; Lebib, S; Roca i Cabarrocas, P; Guimaraes, L;
PUBLISHED: 2003, SOURCE: Advanced Materials, VOLUME: 15, ISSUE: 24
INDEXED IN: Scopus
IN MY: ORCID
136
TITLE: Polymorphous silicon deposited in large area reactor at 13 and 27 MHz Full Text
AUTHORS: Águas, H; Roca i Cabarrocas, P; Lebib, S; Silva, V; Fortunato, E; Martins, R;
PUBLISHED: 2003, SOURCE: Thin Solid Films, VOLUME: 427, ISSUE: 1-2
AUTHORS: Águas, H; Roca i Cabarrocas, P; Lebib, S; Silva, V; Fortunato, E; Martins, R;
PUBLISHED: 2003, SOURCE: Thin Solid Films, VOLUME: 427, ISSUE: 1-2
137
TITLE: Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature Full Text
AUTHORS: Assunção, V; Fortunato, E; Marques, A; Águas, H; Ferreira, I; M.E.V Costa; Martins, R;
PUBLISHED: 2003, SOURCE: Thin Solid Films, VOLUME: 427, ISSUE: 1-2
AUTHORS: Assunção, V; Fortunato, E; Marques, A; Águas, H; Ferreira, I; M.E.V Costa; Martins, R;
PUBLISHED: 2003, SOURCE: Thin Solid Films, VOLUME: 427, ISSUE: 1-2
138
TITLE: Spectroscopic ellipsometry study of amorphous silicon anodically oxidised Full Text
AUTHORS: Águas, H; Gonçalves, A; Pereira, L; Silva, R; Fortunato, E; Martins, R;
PUBLISHED: 2003, SOURCE: Thin Solid Films, VOLUME: 427, ISSUE: 1-2
AUTHORS: Águas, H; Gonçalves, A; Pereira, L; Silva, R; Fortunato, E; Martins, R;
PUBLISHED: 2003, SOURCE: Thin Solid Films, VOLUME: 427, ISSUE: 1-2
139
TITLE: New challenges on gallium-doped zinc oxide films prepared by r.f. magnetron sputtering Full Text
AUTHORS: Vitor Assunção; Elvira Fortunato; António Marques; Alexandra Gonçalves; Isabel Ferreira; Hugo Águas; Rodrigo Martins;
PUBLISHED: 2003, SOURCE: Thin Solid Films, VOLUME: 442, ISSUE: 1-2
AUTHORS: Vitor Assunção; Elvira Fortunato; António Marques; Alexandra Gonçalves; Isabel Ferreira; Hugo Águas; Rodrigo Martins;
PUBLISHED: 2003, SOURCE: Thin Solid Films, VOLUME: 442, ISSUE: 1-2
140
TITLE: Large Area Deposition of Polymorphous Silicon by Plasma Enhanced Chemical Vapor Deposition at 27.12 MHz and 13.56 MHz
AUTHORS: Águas, H; Silva, V; Fortunato, E; Lebib, S; Roca i Cabarrocas, P; Ferreira, I; Guimarães, L; Martins, R;
PUBLISHED: 2003, SOURCE: Jpn. J. Appl. Phys. - Japanese Journal of Applied Physics, VOLUME: 42, ISSUE: Part 1, No. 8
AUTHORS: Águas, H; Silva, V; Fortunato, E; Lebib, S; Roca i Cabarrocas, P; Ferreira, I; Guimarães, L; Martins, R;
PUBLISHED: 2003, SOURCE: Jpn. J. Appl. Phys. - Japanese Journal of Applied Physics, VOLUME: 42, ISSUE: Part 1, No. 8