José Pedro de Abreu Coutinho
AuthID: R-000-8V3
41
TITLE: Adsorption of H-2, O-2, H2O, OH and H on monolayer MoS2
AUTHORS: Ferreira, F; Carvalho, A; Moura, IJM; Coutinho, J; Ribeiro, RM;
PUBLISHED: 2018, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 30, ISSUE: 3
AUTHORS: Ferreira, F; Carvalho, A; Moura, IJM; Coutinho, J; Ribeiro, RM;
PUBLISHED: 2018, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 30, ISSUE: 3
42
TITLE: Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
AUTHORS: Peaker, AR; Markevich, VP; Coutinho, J;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
AUTHORS: Peaker, AR; Markevich, VP; Coutinho, J;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
43
TITLE: Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study
AUTHORS: Capan, I; Brodar, T; Pastuovic, Z; Siegele, R; Ohshima, T; Sato, S; Makino, T; Snoj, L; Radulovic, V; Coutinho, J; Torres, VJB; Demmouche, K;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
AUTHORS: Capan, I; Brodar, T; Pastuovic, Z; Siegele, R; Ohshima, T; Sato, S; Makino, T; Snoj, L; Radulovic, V; Coutinho, J; Torres, VJB; Demmouche, K;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
44
TITLE: Lifetime degradation of n-type Czochralski silicon after hydrogenation
AUTHORS: Vaqueiro Contreras, M; Markevich, VP; Mullins, J; Halsall, MP; Murin, LI; Falster, R; Binns, J; Coutinho, J; Peaker, AR;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
AUTHORS: Vaqueiro Contreras, M; Markevich, VP; Mullins, J; Halsall, MP; Murin, LI; Falster, R; Binns, J; Coutinho, J; Peaker, AR;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
45
TITLE: Optoelectronics and defect levels in hydroxyapatite by first-principles
AUTHORS: Avakyan, LA; Paramonova, EV; Coutinho, J; Oberg, S; Bystrov, VS; Bugaev, LA;
PUBLISHED: 2018, SOURCE: JOURNAL OF CHEMICAL PHYSICS, VOLUME: 148, ISSUE: 15
AUTHORS: Avakyan, LA; Paramonova, EV; Coutinho, J; Oberg, S; Bystrov, VS; Bugaev, LA;
PUBLISHED: 2018, SOURCE: JOURNAL OF CHEMICAL PHYSICS, VOLUME: 148, ISSUE: 15
46
TITLE: First-principles calculations of iron-hydrogen reactions in silicon
AUTHORS: Santos, P; Coutinho, J; Oberg, S;
PUBLISHED: 2018, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 24
AUTHORS: Santos, P; Coutinho, J; Oberg, S;
PUBLISHED: 2018, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 24
47
TITLE: Multiscale in modelling and validation for solar photovoltaics Full Text
AUTHORS: Hamed, T; Adamovic, N; Aeberhard, U; Alonso Alvarez, D; Amin Akhlaghi, Z; Maur, MAD; Beattie, N; Bednar, N; Berland, K; Birner, S; Califano, M; Capan, I; Cerne, B; Chilibon, I; Connolly, JP; Juan, F; Coutinho, J; David, C; Deppert, K; Donchev, V; ...More
PUBLISHED: 2018, SOURCE: EPJ PHOTOVOLTAICS, VOLUME: 9
AUTHORS: Hamed, T; Adamovic, N; Aeberhard, U; Alonso Alvarez, D; Amin Akhlaghi, Z; Maur, MAD; Beattie, N; Bednar, N; Berland, K; Birner, S; Califano, M; Capan, I; Cerne, B; Chilibon, I; Connolly, JP; Juan, F; Coutinho, J; David, C; Deppert, K; Donchev, V; ...More
PUBLISHED: 2018, SOURCE: EPJ PHOTOVOLTAICS, VOLUME: 9
48
TITLE: Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC
AUTHORS: Brodar, T; Capan, I; Radulovic, V; Snoj, L; Pastuovic, Z; Coutinho, J; Ohshima, T;
PUBLISHED: 2018, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 437
AUTHORS: Brodar, T; Capan, I; Radulovic, V; Snoj, L; Pastuovic, Z; Coutinho, J; Ohshima, T;
PUBLISHED: 2018, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 437
49
TITLE: Electronic exchange-correlation, many-body effect issues on first-principles calculations of bulk SiC polytypes
AUTHORS: Demmouche, K; Coutinho, J;
PUBLISHED: 2018, SOURCE: INTERNATIONAL JOURNAL OF MODERN PHYSICS B, VOLUME: 32, ISSUE: 29
AUTHORS: Demmouche, K; Coutinho, J;
PUBLISHED: 2018, SOURCE: INTERNATIONAL JOURNAL OF MODERN PHYSICS B, VOLUME: 32, ISSUE: 29
50
TITLE: Atomic and electronic structure of the Si(331)-(12 x 1) surface
AUTHORS: Zhachuk, R; Coutinho, J; Palotas, K;
PUBLISHED: 2018, SOURCE: JOURNAL OF CHEMICAL PHYSICS, VOLUME: 149, ISSUE: 20
AUTHORS: Zhachuk, R; Coutinho, J; Palotas, K;
PUBLISHED: 2018, SOURCE: JOURNAL OF CHEMICAL PHYSICS, VOLUME: 149, ISSUE: 20
