Nuno Pessoa Barradas


AuthID: R-000-DV0

Publicações Confirmadas: 263



211
TÍTULO: Composition of Ni-Ta-C thick films using simulated annealing analysis of elastic backscattering spectrometry data  Full Text
AUTORES: Jeynes, C; Barradas, NP ; Wilde, JR; Greer, AL;
PUBLICAÇÃO: 2000, FONTE: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 161
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
212
TÍTULO: Growth and characterisation of amorphous carbon films doped with nitrogen  Full Text
AUTORES: Barradas, NP ; Khan, RUA; Anguita, JV; Silva, SRP; Kreissig, U; Grotzschel, R; Moller, W;
PUBLICAÇÃO: 2000, FONTE: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 161
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
213
TÍTULO: Instrumentation amplifiers and voltage controlled current sources for LHC cryogenic instrumentation
AUTORES: Agapito, JA; Barradas, NP ; Cardeira, FM; Casas, J; Fernandes, AP; Franco, FJ; Gomes, P; Goncalves, IC; Cachero, AH; Lozano, J; Martin, MA; Marques, JG; Paz, A; Prata, MJ; Ramalho, AJG; Ruiz, MAR; Santos, JP; Vieira, A;
PUBLICAÇÃO: 2000, FONTE: 6th Workshop on Electronics for LHC Experiments in PROCEEDINGS OF THE SIXTH WORKSHOP ON ELECTRONICS FOR LHC EXPERIMENTS, VOLUME: 2000, NÚMERO: 10
INDEXADO EM: WOS
NO MEU: ResearcherID
214
TÍTULO: Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers  Full Text
AUTORES: Veloso, A; Freitas, PP ; Wei, P; Barradas, NP ; Soares, JC ; Almeida, B ; Sousa, JB ;
PUBLICAÇÃO: 2000, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 77, NÚMERO: 7
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
215
TÍTULO: Neural network analysis of Rutherford backscattering data  Full Text
AUTORES: Vieira, A; Barradas, NP ;
PUBLICAÇÃO: 2000, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 170, NÚMERO: 1-2
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
216
TÍTULO: Simultaneous and consistent analysis of NRA, RES and ERDA data with the IBA DataFurnace  Full Text
AUTORES: Barradas, NP ; Parascandola, S; Sealy, BJ; Grotzschel, R; Kreissig, U;
PUBLICAÇÃO: 2000, FONTE: 14th International Conference on Ion Beam Analysis/6th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 161
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
217
TÍTULO: Bayesian error analysis of Rutherford backscattering spectra  Full Text
AUTORES: Barradas, NP ; Jeynes, C; Jenkin, M; Marriott, PK;
PUBLICAÇÃO: 1999, FONTE: 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis in THIN SOLID FILMS, VOLUME: 343, NÚMERO: 1-2
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
218
TÍTULO: Bayesian inference analysis of ellipsometry data
AUTORES: Barradas, NP ; Keddie, JL; Sackin, R;
PUBLICAÇÃO: 1999, FONTE: PHYSICAL REVIEW E, VOLUME: 59, NÚMERO: 5
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
219
TÍTULO: Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis
AUTORES: Nejim, A; Cristiano, F; Knights, AP; Barradas, NP ; Hemment, PLF; Coleman, PG;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) in Proceedings of the International Conference on Ion Implantation Technology, VOLUME: 2
INDEXADO EM: Scopus
NO MEU: ORCID
220
TÍTULO: Electrical behaviour associated with defect tails in germanium implanted silicon
AUTORES: Nejim, A; Gwilliam, RM; Emerson, NG; Knights, AP; Cristiano, F; Barradas, NP ; Jeynes, C;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) in Proceedings of the International Conference on Ion Implantation Technology, VOLUME: 1
INDEXADO EM: Scopus
NO MEU: ORCID
Página 22 de 27. Total de resultados: 263.

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