Rodrigo Ferrao Paiva Martins


AuthID: R-000-FKV

Confirmed Publications: 493



281
TITLE: Growth of ZnO : Ga thin films at room temperature on polymeric substrates: thickness dependence  Full Text
AUTHORS: Fortunato, E ; Goncalves, A; Assuncao, V; Marques, A; Aguas, H ; Pereira, L ; Ferreira, I ; Martins, R ;
PUBLISHED: 2003, SOURCE: 4th International Conference on Coatings on Glass in THIN SOLID FILMS, VOLUME: 442, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef: 92
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282
TITLE: Highly sensitive ZnO ozone detectors at room temperature
AUTHORS: Bender, M; Fortunato, E ; Nunes, P; Ferreira, I ; Marques, A; Martins, R ; Katsarakis, N; Cimalla, V; Kiriakidis, G;
PUBLISHED: 2003, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, VOLUME: 42, ISSUE: 4B
INDEXED IN: Scopus WOS CrossRef
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283
TITLE: Influence of the deposition pressure on the properties of transparent and conductive ZnO : Ga thin-film produced by r.f. sputtering at room temperature  Full Text
AUTHORS: Assuncao, V; Fortunato, E ; Marques, A; Aguas, H ; Ferreira, I ; Costa, MEV ; Martins, R ;
PUBLISHED: 2003, SOURCE: 4th Symposium on Thin Films for Large Area Electronics held at the EMRS 2002 Spring Conference in THIN SOLID FILMS, VOLUME: 427, ISSUE: 1-2
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
284
TITLE: Large area deposition of polymorphous silicon by plasma enhanced chemical vapor deposition at 27.12 MHz and 13.56 MHz
AUTHORS: Aguas, H ; Silva, V; Fortunato, E ; Lebib, S; Cabarrocas, PRI; Ferreira, I ; Guimaraes, L; Martins, R ;
PUBLISHED: 2003, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, VOLUME: 42, ISSUE: 8
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
285
TITLE: New challenges on gallium-doped zinc oxide films prepared by r.f. magnetron sputtering  Full Text
AUTHORS: Assuncao, V; Fortunato, E ; Marques, A; Goncalves, A; Ferreira, I ; Aguas, H ; Martins, R ;
PUBLISHED: 2003, SOURCE: 4th International Conference on Coatings on Glass in THIN SOLID FILMS, VOLUME: 442, ISSUE: 1-2
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
286
TITLE: Polymorphous silicon deposited in large area reactor at 13 and 27 MHz  Full Text
AUTHORS: Aguas, H ; Cabarrocas, PRI; Lebib, S; Silva, V; Fortunato, E ; Martins, R ;
PUBLISHED: 2003, SOURCE: 4th Symposium on Thin Films for Large Area Electronics held at the EMRS 2002 Spring Conference in THIN SOLID FILMS, VOLUME: 427, ISSUE: 1-2
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
287
TITLE: Polymorphous silicon films deposited at 27.12 MHz  Full Text
AUTHORS: Martins, R ; Aguas, H ; Ferreira, I ; Fortunato, E ; Lebib, S; Cabarrocas, PRI; Guimaraes, L;
PUBLISHED: 2003, SOURCE: CHEMICAL VAPOR DEPOSITION, VOLUME: 9, ISSUE: 6
INDEXED IN: WOS
IN MY: ORCID | ResearcherID
288
TITLE: Polymorphous silicon films deposited at 27.12 MHz  Full Text
AUTHORS: Martins, R ; Aguas, H ; Ferreira, I ; Fortunato, E ; Lebib, S; I Cabarrocas, PR; Guimaraes, L;
PUBLISHED: 2003, SOURCE: Chemical Vapor Deposition, VOLUME: 9, ISSUE: 6
INDEXED IN: Scopus CrossRef
IN MY: ORCID
289
TITLE: Polymorphous silicon films produced in large area reactors by PECVD at 27.12 MHz and 13.56 MHz
AUTHORS: Aguas, H ; Raniero, L; Pereira, L ; Fortunato, E ; Cabarrocas, PRI; Martins, R ;
PUBLISHED: 2003, SOURCE: Symposium on Amorphous and Nanocrystalline Silicon-Based Films held at the 2003 MRS Spring Meeting in AMORPHOUS AND NANOCRYSTALLINE SILICON-BASED FILMS-2003, VOLUME: 762
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
290
TITLE: Spectroscopic ellipsometry study of amorphous silicon anodically oxidised  Full Text
AUTHORS: Aguas, H ; Goncalves, A; Pereira, L ; Silva, R; Fortunato, E ; Martins, R ;
PUBLISHED: 2003, SOURCE: 4th Symposium on Thin Films for Large Area Electronics held at the EMRS 2002 Spring Conference in THIN SOLID FILMS, VOLUME: 427, ISSUE: 1-2
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
Página 29 de 50. Total de resultados: 493.

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