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161

TÃTULO: VIS/NIR detector based on mu c-Si : H p-i-n structures Full Text
AUTORES: Fernandes, M ; Fantoni, A ; Martins, J; Macarico, A; Schwarz, R ; Vieira, M ;
PUBLICAÇÃO: 2000, FONTE: Symposium P: Optical Characterization of Semiconductor Layers and Surfaces at the 1999 E-MRS Spring Conference in THIN SOLID FILMS, VOLUME: 364, NÚMERO: 1-2

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162

TÃTULO: Anisotropic transport in microcrystalline p-i-n devices
AUTORES: Vieira, M ; Fantoni, A ; Fernandes, M ; Macarico, A; Martins, J; Louro, P ; Schwarz, R ;
PUBLICAÇÃO: 1999, FONTE: Symposium on Amorphous and Heterogeneous Silicon Thin Film - Fundamentals to Devices-1999 Held at the 1999 MRS Spring Meeting in AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, VOLUME: 557

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163

TÃTULO: Long-term stability of microcrystalline silicon p-i-n solar cells exposed to sun light
AUTORES: Sanguino, P; Koynov, S; Schwarz, R ; Fernandes, M ; Vieira, M ; Manso, R; Joyce, A; Collares Pereira, M;
PUBLICAÇÃO: 1999, FONTE: Symposium on Amorphous and Heterogeneous Silicon Thin Film - Fundamentals to Devices-1999 Held at the 1999 MRS Spring Meeting in AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, VOLUME: 557

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164

TÃTULO: Microcrystalline silicon thin films for optical applications Full Text
AUTORES: Vieira, M ; Morgado, E; Macarico, A; Koynov, S; Schwarz, R ;
PUBLICAÇÃO: 1999, FONTE: 2nd European Conference on Hard Coatings (ETCHC-2)/3rd Iberian Vacuum Meeting (3rd RIVA) in VACUUM, VOLUME: 52, NÚMERO: 1-2

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165

TÃTULO: Near-infrared photodetectors based on HgInTe-semiconductor compound
AUTORES: Malik, A; Vieira, M ; Fernandes, M ; Macarico, F; Grushka, ZM;
PUBLICAÇÃO: 1999, FONTE: Conference on Photodetectors - Materials and Devices IV in PHOTODETECTORS: MATERIALS AND DEVICES IV, VOLUME: 3629

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166

TÃTULO: Photocurrent in microcrystalline hydrogenated silicon p-i-n devices
AUTORES: Fernandes, M ; Vieira, M ; Macarico, A; Koynov, S; Fantoni, A ; Schwarz, R ;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1998 MRS Spring Meeting in Materials Research Society Symposium - Proceedings, VOLUME: 507

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167