Eduardo Jorge da Costa Alves


AuthID: R-000-4EK

Publicações Confirmadas: 597



491
TÍTULO: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (vol 80, pg 3913, 2002)  Full Text
AUTORES: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N; Watson, IM; Deatcher, CJ;
PUBLICAÇÃO: 2002, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 81, NÚMERO: 18
INDEXADO EM: Scopus WOS CrossRef: 8
NO MEU: ORCID | ResearcherID
492
TÍTULO: Strain relaxation and compositional analysis of InGaN/GaN layers by Rutherford backscattering  Full Text
AUTORES: Alves, E ; Pereira, S ; Correia, MR ; Pereira, E; Sequeira, AD; Franco, N;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef: 8
NO MEU: ORCID | ResearcherID
493
TÍTULO: Structural and optical characterization of topaz implanted with Fe and Co  Full Text
AUTORES: Marques, C; Falcao, A; da Silva, RC; Alves, E ;
PUBLICAÇÃO: 2002, FONTE: 11th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 191, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
494
TÍTULO: Structural and optical properties of InGaN/GaN layers close to the critical layer thickness  Full Text
AUTORES: Pereira, S ; Correia, MR ; Pereira, E; Trager Cowan, C; Sweeney, F; O'Donnell, KP; Alves, E ; Franco, N; Sequeira, AD;
PUBLICAÇÃO: 2002, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 81, NÚMERO: 7
INDEXADO EM: Scopus WOS CrossRef: 85
NO MEU: ORCID | ResearcherID
495
TÍTULO: Structural development in hard Si-based TIN coatings as a function of temperature: a comprehensive study in vacuum and in air
AUTORES: Vaz, F ; Rebouta, L ; Carvalho, S ; Rocha, LA ; Soares, D ; Alves, E ;
PUBLICAÇÃO: 2002, FONTE: 3rd International Symposium on Nitrides in NITRIDES AND OXYNITRIDES 2, VOLUME: 383
INDEXADO EM: Scopus WOS CrossRef: 2
NO MEU: ORCID
496
TÍTULO: Study of calcium implanted GaN  Full Text
AUTORES: Alves, E ; Liu, C; Lopes, EB ; da Silva, MF; Soares, JC ; Boemare, C; Soares, MJ ; Monteiro, T ;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef: 4
NO MEU: ORCID | ResearcherID
497
TÍTULO: Study of roughness in Ti0.4Al0.6N/Mo multilayer structures  Full Text
AUTORES: Tavares, CJ ; Rebouta, L ; Alves, E ; Barradas, NP ; Pacaud, J; Riviere, JP;
PUBLICAÇÃO: 2002, FONTE: 7th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 188, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
498
TÍTULO: Surface quality studies of high-T-c superconductors of the Hg-, Tl- and HgxTl1-x-families: RBS and resonant C and O backscattering studies  Full Text
AUTORES: Vantomme, A; Alves, E ; Correia, JG ; Bryntse, I; Johansson, LG; Loureiro, SM; Le Floch, S; Toulemonde, P; Bordet, P; Bougerol Chaillout, C;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
499
TÍTULO: The structure of sapphire implanted with nitrogen at room temperature and 1000 degrees C  Full Text
AUTORES: McHargue, C; Ononye, LC; Allard, LF; Alves, E ; da Silva, MF; Soares, JC ;
PUBLICAÇÃO: 2002, FONTE: 11th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 191, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
500
TÍTULO: Amorphization of GaN by ion implantation  Full Text
AUTORES: Liu, C; Wenzel, A; Rauschenbach, B; Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ; Fan, XJ;
PUBLICAÇÃO: 2001, FONTE: E-MRS Spring Meeting on Materials Science with Ion Beams in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 178, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
Página 50 de 60. Total de resultados: 597.

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