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TÍTULO: High-T-c superconductors studies with radioactive ion beams at isolde
AUTORES: Correia, JG; Alves, E ; Amaral, VS; Araujo, JP ; Bordet, P; Butz, T; Capponi, JJ; Ctortecka, B; Le Floch, S; Galindo, V; Gatt, R; Langouche, G; Loureiro, SM; Lourenco, AA; Marques, JG; Melo, AA; von Papen, T; Ramos, AR ; Senateur, JP; da Silva, MF; Soares, JC; Sousa, JB; Toulemonde, P; Troger, W; Vantomme, A; Wahl, U; Weiss, F; ...Mais
PUBLICAÇÃO: 1999, FONTE: Workshop on Ion and Slow Positron Beam Utilisation in PROCEEDINGS OF THE WORKSHOP ON ION AND SLOW POSITRON BEAM UTILISATION
INDEXADO EM: WOS
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TÍTULO: The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing (Reprinted from Nuclear Instruments and Methods in Physics B, vol 106, pg 602-605, 1995)
AUTORES: Marques, JG; Melo, AA; Soares, JC; Alves, E ; daSilva, MF; Freitag, K;
PUBLICAÇÃO: 1996, FONTE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS
INDEXADO EM: WOS
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