Marco António Baptista Peres
AuthID: R-000-AAW
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TÃTULO: High temperature annealing of Europium implanted AlN Full Text
AUTORES: Lorenz, K ; Magalhaes, S; Alves, E ; Peres, M; Monteiro, T ; Neves, AJ ; Bockowski, M;
PUBLICAÇÃO: 2010, FONTE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, NÚMERO: 19
AUTORES: Lorenz, K ; Magalhaes, S; Alves, E ; Peres, M; Monteiro, T ; Neves, AJ ; Bockowski, M;
PUBLICAÇÃO: 2010, FONTE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, NÚMERO: 19
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TÃTULO: Damage recovery and optical activity in europium implanted wide gap oxides Full Text
AUTORES: Alves, E ; Marques, C; Franco, N; Alves, LC ; Peres, M; Soares, MJ ; Monteiro, T ;
PUBLICAÇÃO: 2010, FONTE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, NÚMERO: 19
AUTORES: Alves, E ; Marques, C; Franco, N; Alves, LC ; Peres, M; Soares, MJ ; Monteiro, T ;
PUBLICAÇÃO: 2010, FONTE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, NÚMERO: 19
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TÃTULO: Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots Full Text
AUTORES: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Alves, E ; Lorenz, K ; Okuno Vila, H; Fellmann, V; Bougerol, C; Daudin, B;
PUBLICAÇÃO: 2010, FONTE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, NÚMERO: 7
AUTORES: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Alves, E ; Lorenz, K ; Okuno Vila, H; Fellmann, V; Bougerol, C; Daudin, B;
PUBLICAÇÃO: 2010, FONTE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, NÚMERO: 7
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TÃTULO: Morphological and optical studies of self-forming ZnO nanocolumn and nanocone arrays grown by PLD on various substrates Full Text
AUTORES: Peres, M; Soares, MJ ; Neves, AJ ; Monteiro, T ; Sandana, VE; Teherani, F; Rogers, DJ;
PUBLICAÇÃO: 2010, FONTE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, NÚMERO: 7
AUTORES: Peres, M; Soares, MJ ; Neves, AJ ; Monteiro, T ; Sandana, VE; Teherani, F; Rogers, DJ;
PUBLICAÇÃO: 2010, FONTE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, NÚMERO: 7
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TÃTULO: Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice
AUTORES: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Franco, N; Lorenz, K ; Alves, E ; Damilano, B; Massies, J; Dussaigne, A; Grandjean, N;
PUBLICAÇÃO: 2010, FONTE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, NÚMERO: 4
AUTORES: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Franco, N; Lorenz, K ; Alves, E ; Damilano, B; Massies, J; Dussaigne, A; Grandjean, N;
PUBLICAÇÃO: 2010, FONTE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, NÚMERO: 4
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TÃTULO: Structural and Optical Characterization of ZnO Nanowires Grown on Alumina by Thermal Evaporation Method
AUTORES: Mute, A; Peres, M; Peiris, TC; Lourenco, AC; Lars R Jensen; Monteiro, T ;
PUBLICAÇÃO: 2010, FONTE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, NÚMERO: 4
AUTORES: Mute, A; Peres, M; Peiris, TC; Lourenco, AC; Lars R Jensen; Monteiro, T ;
PUBLICAÇÃO: 2010, FONTE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, NÚMERO: 4
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TÃTULO: Optical doping and damage formation in AlN by Eu implantation Full Text
AUTORES: Lorenz, K ; Alves, E ; Gloux, F; Ruterana, P; Peres, M; Neves, AJ ; Monteiro, T ;
PUBLICAÇÃO: 2010, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 107, NÚMERO: 2
AUTORES: Lorenz, K ; Alves, E ; Gloux, F; Ruterana, P; Peres, M; Neves, AJ ; Monteiro, T ;
PUBLICAÇÃO: 2010, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 107, NÚMERO: 2
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TÃTULO: Defect studies and optical activation of Yb doped GaN Full Text
AUTORES: Lorenz, K ; Alves, E ; Magalhes, S; Peres, M; Monteiro, T; Kozanecki, A; Valerio, MEG;
PUBLICAÇÃO: 2010, FONTE: 16th International Conference on Defects in Insulating Materials, ICDIM2008 in Journal of Physics: Conference Series, VOLUME: 249
AUTORES: Lorenz, K ; Alves, E ; Magalhes, S; Peres, M; Monteiro, T; Kozanecki, A; Valerio, MEG;
PUBLICAÇÃO: 2010, FONTE: 16th International Conference on Defects in Insulating Materials, ICDIM2008 in Journal of Physics: Conference Series, VOLUME: 249
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TÃTULO: Raman Scattering on Overtones of Fully Symmetric LO Phonons in Zn0.9Mn0.1O Nanocrystals under Resonance Excitation Conditions Full Text
AUTORES: Kaidashev, VE; Misochko, OV; Correia, MR ; Peres, M; Monteiro, T ; Sobolev, NA; Kaidashev, EM;
PUBLICAÇÃO: 2009, FONTE: TECHNICAL PHYSICS LETTERS, VOLUME: 35, NÚMERO: 12
AUTORES: Kaidashev, VE; Misochko, OV; Correia, MR ; Peres, M; Monteiro, T ; Sobolev, NA; Kaidashev, EM;
PUBLICAÇÃO: 2009, FONTE: TECHNICAL PHYSICS LETTERS, VOLUME: 35, NÚMERO: 12
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TÃTULO: Structural and optical properties of Zn0.9Mn0.1O/ZnO core-shell nanowires designed by pulsed laser deposition Full Text
AUTORES: Kaydashev, VE; Kaidashev, EM; Peres, M; Monteiro, T ; Correia, MR ; Sobolev, NA; Alves, LC ; Franco, N; Alves, E ;
PUBLICAÇÃO: 2009, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 106, NÚMERO: 9
AUTORES: Kaydashev, VE; Kaidashev, EM; Peres, M; Monteiro, T ; Correia, MR ; Sobolev, NA; Alves, LC ; Franco, N; Alves, E ;
PUBLICAÇÃO: 2009, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 106, NÚMERO: 9
