Katharina Lorenz


AuthID: R-000-90E

Publicações Confirmadas: 129



1
TÍTULO: A comparative study of photo-, cathodo- and ionoluminescence of GaN nanowires implanted with rare earth ions  Full Text
AUTORES: Rodrigues, J; Miranda, SMC; Peres, M; Nogales, E; Alves, LC; Alves, E ; Tourbot, G; Daudin, B; Mendez, B; Lorenz, K ; Monteiro, T;
PUBLICAÇÃO: 2013, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 306
INDEXADO EM: Scopus WOS CrossRef: 5
NO MEU: ORCID | ResearcherID
2
TÍTULO: Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping  Full Text
AUTORES: Vyacheslav Kachkanov; Igor Dolbnya; Kevin O'Donnell; Katharina Lorenz ; Sergio Pereira ; Ian Watson; Thomas Sadler; Haoning N Li; Vitaly Zubialevich; Peter Parbrook;
PUBLICAÇÃO: 2013, FONTE: 4th International Symposium on Growth of III-Nitrides (ISGN) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3, VOLUME: 10, NÚMERO: 3
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
3
TÍTULO: Comparison of low- and room-temperature damage formation in Ar ion implanted GaN and ZnO  Full Text
AUTORES: Wendler, E; Wesch, W; Yu. Y Azarov; Catarino, N; Redondo Cubero, A; Alves, E ; Lorenz, K ;
PUBLICAÇÃO: 2013, FONTE: 18th International Conference on Ion Beam Modifications of Materials (IBMM) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 307
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
4
TÍTULO: Lattice site location and luminescence studies of AlxGa1-xN alloys doped with thulium ions  Full Text
AUTORES: Fialho, M; Lorenz, K ; Magalhaes, S; Rodrigues, J; Santos, NF; Monteiro, T; Alves, E ;
PUBLICAÇÃO: 2013, FONTE: 18th International Conference on Ion Beam Modifications of Materials (IBMM) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 307
INDEXADO EM: Scopus WOS CrossRef: 4
NO MEU: ORCID | ResearcherID
5
TÍTULO: Microprobe analysis, iono- and photo-luminescence of Mn2+ activated ZnGa2O4 fibres  Full Text
AUTORES: Santos, NF; Fernandes, AJS; Alves, LC; Sobolev, NA; Alves, E ; Lorenz, K ; Costa, FM ; Monteiro, T;
PUBLICAÇÃO: 2013, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 306
INDEXADO EM: Scopus WOS CrossRef: 6
NO MEU: ORCID | ResearcherID
6
TÍTULO: The influence of photon excitation and proton irradiation on the luminescence properties of yttria stabilized zirconia doped with praseodymium ions  Full Text
AUTORES: Soares, MRN; Soares, MJ ; Alves, LC; Alves, E ; Lorenz, K ; Costa, FM ; Monteiro, T;
PUBLICAÇÃO: 2013, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 306
INDEXADO EM: Scopus WOS CrossRef: 1
NO MEU: ORCID | ResearcherID
7
TÍTULO: AlN content influence on the properties of AlxGa1-xN doped with Pr ions  Full Text
AUTORES: Fialho, M; Magalhaes, S; Alves, LC ; Marques, C; Maalej, R; Monteiro, T ; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2012, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273
INDEXADO EM: Scopus WOS CrossRef: 3
NO MEU: ORCID | ResearcherID
8
TÍTULO: Band gap engineering approaches to increase InGaN/GaN LED efficiency  Full Text
AUTORES: Maur, MAD; Lorenz, K ; Di Carlo, A;
PUBLICAÇÃO: 2012, FONTE: 11th International Conference on Numerical Simulation of Optoelectronic Devices in Optical and Quantum Electronics (NUSOD) in OPTICAL AND QUANTUM ELECTRONICS, VOLUME: 44, NÚMERO: 3-5
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
9
TÍTULO: Cd ion implantation in AlN  Full Text
AUTORES: Miranda, SMC; Franco, N; Alves, E ; Lorenz, K ;
PUBLICAÇÃO: 2012, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 289
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
10
TÍTULO: Characterization of InGaN and InAlN epilayers by microdiffraction X-ray reciprocal space mapping
AUTORES: Kachkanov, V; Dolbnya, IP; O'Donnell, KP; Lorenz, K ; Pereira, S ; Martin, RW; Edwards, PR; Watson, IM;
PUBLICAÇÃO: 2012, FONTE: 2011 MRS Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1396
INDEXADO EM: Scopus CrossRef
NO MEU: ORCID
Página 1 de 13. Total de resultados: 129.

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