Nikolai Andreevitch Sobolev
AuthID: R-000-DJF
171
TÃTULO: Photo-EPR studies on the AB3 and AB4 nickel-related defects in diamond Full Text
AUTORES: Pereira, RN ; Gehlhoff, W; Sobolev, NA; Neves, AJ ; Bimberg, D;
PUBLICAÇÃO: 2001, FONTE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
AUTORES: Pereira, RN ; Gehlhoff, W; Sobolev, NA; Neves, AJ ; Bimberg, D;
PUBLICAÇÃO: 2001, FONTE: 21st International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 308
172
TÃTULO: Determination of the W8 and AB5 defect levels in the diamond gap
AUTORES: Pereira, RN ; Gehlhoff, W; Sobolev, NA; Neves, AJ ; Bimberg, D;
PUBLICAÇÃO: 2001, FONTE: Conference on Doping Issues in Wide Band-Gap Semiconductors in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 13, NÚMERO: 40
AUTORES: Pereira, RN ; Gehlhoff, W; Sobolev, NA; Neves, AJ ; Bimberg, D;
PUBLICAÇÃO: 2001, FONTE: Conference on Doping Issues in Wide Band-Gap Semiconductors in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 13, NÚMERO: 40
173
TÃTULO: Evaluation of the infrared absorption in nm-thick heavily boron-doped Si1-xGex layers on silicon Full Text
AUTORES: Cavaco, A; Sobolev, NA; Carmo, MC; Presting, H; Konig, U;
PUBLICAÇÃO: 2001, FONTE: 3rd International Conference on Materials in Microelectronics in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 12, NÚMERO: 4-6
AUTORES: Cavaco, A; Sobolev, NA; Carmo, MC; Presting, H; Konig, U;
PUBLICAÇÃO: 2001, FONTE: 3rd International Conference on Materials in Microelectronics in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 12, NÚMERO: 4-6
174
TÃTULO: Coherent amorphization of Ge/Si multilayers with ion beams Full Text
AUTORES: Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ; Sobolev, NA; Carmo, MC;
PUBLICAÇÃO: 2001, FONTE: E-MRS Spring Meeting on Materials Science with Ion Beams in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 178, NÚMERO: 1-4
AUTORES: Alves, E ; Sequeira, AD; Franco, N; da Silva, MF; Soares, JC ; Sobolev, NA; Carmo, MC;
PUBLICAÇÃO: 2001, FONTE: E-MRS Spring Meeting on Materials Science with Ion Beams in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 178, NÚMERO: 1-4
175
TÃTULO: Enhanced radiation hardness of InAs/GaAs quantum dot structures Full Text
AUTORES: Sobolev, NA; Cavaco, A; Carmo, MC; Grundmann, M; Heinrichsdorff, F; Bimberg, D;
PUBLICAÇÃO: 2001, FONTE: International Conference on Semiconductor Quantum Dots (QD2000) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 224, NÚMERO: 1
AUTORES: Sobolev, NA; Cavaco, A; Carmo, MC; Grundmann, M; Heinrichsdorff, F; Bimberg, D;
PUBLICAÇÃO: 2001, FONTE: International Conference on Semiconductor Quantum Dots (QD2000) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 224, NÚMERO: 1
176
TÃTULO: Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation
AUTORES: Ribbat, C; Sellin, R; Grundmann, M; Bimberg, D; Sobolev, NA; Carmo, MC;
PUBLICAÇÃO: 2001, FONTE: ELECTRONICS LETTERS, VOLUME: 37, NÚMERO: 3
AUTORES: Ribbat, C; Sellin, R; Grundmann, M; Bimberg, D; Sobolev, NA; Carmo, MC;
PUBLICAÇÃO: 2001, FONTE: ELECTRONICS LETTERS, VOLUME: 37, NÚMERO: 3
177
TÃTULO: Influence of electron irradiation on carrier recombination and intradot relaxation in InGaAs/GaAs quantum dot structures
AUTORES: Sobolev, NA; Cavaco, A; Carmo, MC; Born, H; Grundmann, M; Heinrichsdorff, F; Heitz, R; Hoffmann, A; Bimberg, D;
PUBLICAÇÃO: 2001, FONTE: International Conference on Physics, Chemistry and Application of Nanostructures in PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001
AUTORES: Sobolev, NA; Cavaco, A; Carmo, MC; Born, H; Grundmann, M; Heinrichsdorff, F; Heitz, R; Hoffmann, A; Bimberg, D;
PUBLICAÇÃO: 2001, FONTE: International Conference on Physics, Chemistry and Application of Nanostructures in PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001
INDEXADO EM: 
WOS
WOS178
TÃTULO: INFLUENCE OF ELECTRON IRRADIATION ON CARRIER RECOMBINATION AND INTRADOT RELAXATION IN InGaAs/GaAs QUANTUM DOT STRUCTURES
AUTORES: SOBOLEV, NA; CAVACO, A; CARMO, MC; BORN, H; GRUNDMANN, M; HEINRICHSDORFF, F; HEITZ, R; HOFFMANN, A; BIMBERG, D;
PUBLICAÇÃO: 2001, FONTE: Physics, Chemistry and Application of Nanostructures - Reviews And Short Notes To Nanomeeting-2001
AUTORES: SOBOLEV, NA; CAVACO, A; CARMO, MC; BORN, H; GRUNDMANN, M; HEINRICHSDORFF, F; HEITZ, R; HOFFMANN, A; BIMBERG, D;
PUBLICAÇÃO: 2001, FONTE: Physics, Chemistry and Application of Nanostructures - Reviews And Short Notes To Nanomeeting-2001
179
TÃTULO: Erratum: Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation (Electronics Letters 37:3 (2001) 174-175)
AUTORES: Ribbat C.; Sellin R.; Grundmann M.; Bimberg D.; Sobolev N.; Carmo M.;
PUBLICAÇÃO: 2001, FONTE: Electronics Letters, VOLUME: 37, NÚMERO: 7
AUTORES: Ribbat C.; Sellin R.; Grundmann M.; Bimberg D.; Sobolev N.; Carmo M.;
PUBLICAÇÃO: 2001, FONTE: Electronics Letters, VOLUME: 37, NÚMERO: 7
INDEXADO EM: 
Scopus
Scopus NO MEU: 
ORCID
ORCID180
TÃTULO: New paramagnetic centers in annealed high-pressure synthetic diamond Full Text
AUTORES: Neves, AJ ; Pereira, R ; Sobolev, NA; Nazare, MH; Gehlhoff, W; Naser, A; Kanda, H;
PUBLICAÇÃO: 2000, FONTE: 10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999) in DIAMOND AND RELATED MATERIALS, VOLUME: 9, NÚMERO: 3-6
AUTORES: Neves, AJ ; Pereira, R ; Sobolev, NA; Nazare, MH; Gehlhoff, W; Naser, A; Kanda, H;
PUBLICAÇÃO: 2000, FONTE: 10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999) in DIAMOND AND RELATED MATERIALS, VOLUME: 9, NÚMERO: 3-6
