11
TÍTULO: Degradation of particle detectors based on a-Si : H by 1.5 Mev He-4 and 1 MeV protons  Full Text
AUTORES: Schwarz, R ; Braz, T; Sanguino, P; Ferreira, P; Macarico, A; Vieira, M ; Marques, C; Alves, E ;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, NÚMERO: 1 SPEC. ISS.
INDEXADO EM: Scopus WOS CrossRef
12
TÍTULO: Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN  Full Text
AUTORES: Sanguino, P; Niehus, M; Melo, L ; Schwarz, R ; Fedorov, A ; Martinho, JMG ; Soares, MJ ; Monteiro, T ;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXADO EM: Scopus WOS CrossRef: 1
13
TÍTULO: Photocarrier response time scanner  Full Text
AUTORES: Schwarz, R ; Fernandes, M ; Fantoni, A ; Vieira, M ; Ferreira, P; Sanguino, P;
PUBLICAÇÃO: 2002, FONTE: 19th International Conference on Amorphis and Microcrystalline Semiconductors (ICAMS 19) in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 299, NÚMERO: PART 2
INDEXADO EM: Scopus WOS CrossRef
14
TÍTULO: Lifetime regime in the electrically-detected transient grating method applied to amorphous and microcrystalline silicon films
AUTORES: Sanguino, P; Niehus, M; Koynov, S; Brogueira, P ; Schwarz, R ; Conde, JP ; Chu, V ; Schiff, EA;
PUBLICAÇÃO: 2002, FONTE: Symposium on Amorphous and Heterogeneous Silicon-Based Films held at the 2002 MRS Spring Meeting in AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, VOLUME: 715
INDEXADO EM: Scopus WOS
15
TÍTULO: Layer by layer growth of GaN films by low temperature cyclic process
AUTORES: Sanguino, P; Koynov, S; Niehusl, M; Melo, LV ; Schwarz, R ; Alves, H; Meyer, BK;
PUBLICAÇÃO: 2002, FONTE: Symposium on GaN and Related Alloys-2001 held at the 2001 MRS Fall Meeting in GAN AND RELATED ALLOYS-2001, VOLUME: 693
INDEXADO EM: Scopus WOS
16
TÍTULO: Low temperature photoluminescence, transient photoconductivity and microwave reflection for optical properties and transport in PLD-GaN  Full Text
AUTORES: Niehus, M; Sanguino, P; Schwarz, R ; Monteiro, T ; Soares, MJ ; Pereira, E; Kunst, M; Koynov, S;
PUBLICAÇÃO: 2002, FONTE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef
17
TÍTULO: Photoconductivity studies of Al0.18Ga0.82N/GaN single heterostructure  Full Text
AUTORES: Niehus, M; Schwarz, R ; Koynov, S; Sanguino, P; Heuken, M; Meyer, BK;
PUBLICAÇÃO: 2001, FONTE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 188, NÚMERO: 2
INDEXADO EM: Scopus WOS CrossRef
18
TÍTULO: Response time measurements and flying spot technique in microcrystalline silicon solar cells
AUTORES: Schwarz, R ; Sanguino, P; Koynov, S; Fernandes, M ; Macarico, F; Louro, P ; Vieira, M ;
PUBLICAÇÃO: 2000, FONTE: Amorphous and Heterogeneus Silicon Thin Films-2000 in Materials Research Society Symposium - Proceedings, VOLUME: 609
INDEXADO EM: Scopus
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