341
TITLE: Silicon etching in CF(4)/O(2) and SF(6) atmospheres
AUTHORS: Silva, A; Raniero, L; Ferreira, E; Aguas, H ; Pereira, L ; Fortunato, E ; Martins, R;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
342
TITLE: Detection limits of a nip a-Si : H linear array position sensitive detector
AUTHORS: Martins, R; Costa, D; Aguas, H; Soares, F; Marques, A; Ferreira, I; Borges, P;
PUBLISHED: 2004, SOURCE: Symposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2004 MRS Spring Meeting in AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004, VOLUME: 808
INDEXED IN: WOS
343
TITLE: Electron ionization mass spectrometry in the characterization of azidonitriles  Full Text
AUTHORS: Martins, F; Duarte, MF ; Fernandez, MT ; Lanley, GJ; Rodrigues, P; Barros, MT ; Costa, ML ;
PUBLISHED: 2004, SOURCE: RAPID COMMUNICATIONS IN MASS SPECTROMETRY, VOLUME: 18, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
344
TITLE: Characterization of polymorphous silicon thin film and solar cells
AUTHORS: Zhang, S; Xu, Y; Liao, X; Martins, R; Fortunate, E; Zeng, X; Hu, Z; Kong, G;
PUBLISHED: 2004, SOURCE: Advanced Materials Forum II: Proceedings of the II International Materials Symposium: Materials 2003 and XI Encontro da Sociedade Portugesa de Materials, 2003 ATERIAIS in Materials Science Forum, VOLUME: 455-456
INDEXED IN: Scopus
IN MY: ORCID
345
TITLE: Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer
AUTHORS: Fortunate, E; Goncalves, A; De Carvalho, CN; Pimentel, A; Lavareda, G; Marques, A; Martins, R;
PUBLISHED: 2004, SOURCE: Flexible Electronics 2004 - Materials and Device Technology in Materials Research Society Symposium Proceedings, VOLUME: 814
INDEXED IN: Scopus
IN MY: ORCID
346
TITLE: Role of the rf frequency on the structure and composition of polymorphous silicon films  Full Text
AUTHORS: Águas, H; Raniero, L; Pereira, L; A.S Viana; Fortunato, E; Martins, R;
PUBLISHED: 2004, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 338-340
INDEXED IN: CrossRef
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347
TITLE: Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si:H MIS photodiodes  Full Text
AUTHORS: Águas, H; Pereira, L; Ferreira, I; A.R Ramos; A.S Viana; Andreu, J; Vilarinho, P; Fortunato, E; Martins, R;
PUBLISHED: 2004, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 338-340
INDEXED IN: CrossRef: 2
IN MY: ORCID
348
TITLE: Effect of the tunnelling oxide growth by H2O2 oxidation on the performance of a-Si:H MIS photodiodes  Full Text
AUTHORS: Águas, H; Perreira, L; R.J.C Silva; Fortunato, E; Martins, R;
PUBLISHED: 2004, SOURCE: Materials Science and Engineering: B, VOLUME: 109, ISSUE: 1-3
INDEXED IN: CrossRef
IN MY: ORCID
349
TITLE: Implantation and annealing studies of Tm-implanted GaN  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Wahl, U ; Monteiro, T ; Dalmasso, S; Martin, RW; O'Donnell, KP; Vianden, R;
PUBLISHED: 2003, SOURCE: Meeting of the European-Materials-Research-Society (EMRS) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 105, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef: 10
350
TITLE: Wishful physics - some common misconceptions about InGaN  Full Text
AUTHORS: O'Donnell, KP; Pereira, S ; Martin, RW; Edwards, PR; Tobin, MJ; Mosselmans, JFW;
PUBLISHED: 2003, SOURCE: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, VOLUME: 195, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
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