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TÍTULO: Silicon thin films prepared in the transition region and their use in solar cells  Full Text
AUTORES: Zhang, S; Liao, X; Raniero, L; Fortunato, E ; Xu, Y; Kong, G; Aguas, H ; Ferreira, I ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 14th International Photovoltaic Science and Engineering Conference in SOLAR ENERGY MATERIALS AND SOLAR CELLS, VOLUME: 90, NÚMERO: 18-19
INDEXADO EM: Scopus WOS CrossRef
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TÍTULO: Characterization of nanocrystalline silicon carbide films  Full Text
AUTORES: Zhang, S; Pereira, L ; Hu, Z; Ranieiro, L; Fortonato, E; Ferreira, I ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 9-20
INDEXADO EM: Scopus WOS CrossRef
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TÍTULO: Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells  Full Text
AUTORES: Zhihua H Hu; Xianbo B Liao; Hongwei W Diao; Yi Cai; Shibin B Zhang; Elvira Fortunato ; Rodrigo Martins ;
PUBLICAÇÃO: 2006, FONTE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 9-20
INDEXADO EM: Scopus WOS CrossRef
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TÍTULO: Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers  Full Text
AUTORES: Ying Xu; Zhihua H Hu; Hongwei W Diao; Yi Cai; Shibin B Zhang; Xiangbo B Zeng; Huiying Y Hao; Xianbo B Liao; Elvira Fortunato ; Rodrigo Martins ;
PUBLICAÇÃO: 2006, FONTE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 9-20
INDEXADO EM: Scopus WOS CrossRef
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TÍTULO: Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHz  Full Text
AUTORES: Raniero, L; Zhang, S; Aguas, H ; Ferreira, I ; Igreja, R ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2005, FONTE: 8th International Conference on Polycrystalline Semiconductors in THIN SOLID FILMS, VOLUME: 487, NÚMERO: 1-2
INDEXADO EM: Scopus WOS CrossRef
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TÍTULO: Selected papers from the 2(nd) international conference on advances of thin films and coatings (thin films 2004), singapore, 13(th)-17(th) July, 2004  Full Text
AUTORES: Zhang, S; Teixeira, V;
PUBLICAÇÃO: 2005, FONTE: SURFACE & COATINGS TECHNOLOGY, VOLUME: 198, NÚMERO: 1-3
INDEXADO EM: Scopus WOS
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TÍTULO: Characterization of silicon carbide thin films and their use in colour sensor  Full Text
AUTORES: Zhang, S; Raniero, L; Fortunato, E ; Liao, X; Hu, Z; Ferreira, I ; Aguas, H ; Ramos, AR ; Alves, E ; Martins, R ;
PUBLICAÇÃO: 2005, FONTE: International Conference on Physics, Chemistry and Engineering of Solar Cells in SOLAR ENERGY MATERIALS AND SOLAR CELLS, VOLUME: 87, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
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TÍTULO: Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p-i-n solar cell  Full Text
AUTORES: Raniero, L; Martins, N; Canhola, P; Zhang, S; Pereira, S; Ferreira, I ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2005, FONTE: International Conference on Physics, Chemistry and Engineering of Solar Cells in SOLAR ENERGY MATERIALS AND SOLAR CELLS, VOLUME: 87, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
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TÍTULO: Influence of hydrogen plasma on electrical and optical properties of transparent conductive oxides
AUTORES: Raniero, L; Goncalves, A; Pimentel, A ; Ferreira, I ; Zhang, S; Pereira, L ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2005, FONTE: Symposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2005 MRS Spring Meeting in Amorphous and Nanocrystalline Silicon Science and Technology-2005, VOLUME: 862
INDEXADO EM: Scopus WOS
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TÍTULO: Amorphous silicon based p-i-i-n structure for color sensor
AUTORES: Zhang, S; Raniero, L; Fortunato, E ; Pereira, L ; Aguas, H ; Ferreira, L; Martins, R ;
PUBLICAÇÃO: 2005, FONTE: Symposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2005 MRS Spring Meeting in Amorphous and Nanocrystalline Silicon Science and Technology-2005, VOLUME: 862
INDEXADO EM: Scopus WOS
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