Ulrich Wahl
AuthID: R-000-HB1
41
TÃTULO: Advances in electron emission channeling measurements in semiconductors Full Text
AUTORES: Wahl, U;
PUBLICAÇÃO: 2000, FONTE: HYPERFINE INTERACTIONS, VOLUME: 129, NÚMERO: 1-4
AUTORES: Wahl, U;
PUBLICAÇÃO: 2000, FONTE: HYPERFINE INTERACTIONS, VOLUME: 129, NÚMERO: 1-4
NO MEU: 
ORCID | 
ResearcherID
ORCID | ResearcherID42
TÃTULO: Study of indium-defect interactions in diamond using two-dimensional conversion-electron emission channelling
AUTORES: Doyle, BP; Storbeck, EJ; Wahl, U; Connell, SH; Sellschop, JPF; the ISOLDE collaboration;
PUBLICAÇÃO: 2000, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 12, NÚMERO: 1
AUTORES: Doyle, BP; Storbeck, EJ; Wahl, U; Connell, SH; Sellschop, JPF; the ISOLDE collaboration;
PUBLICAÇÃO: 2000, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 12, NÚMERO: 1
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID43
TÃTULO: High-T-c superconductors studies with radioactive ion beams at isolde
AUTORES: Correia, JG; Alves, E ; Amaral, VS; Araujo, JP ; Bordet, P; Butz, T; Capponi, JJ; Ctortecka, B; Le Floch, S; Galindo, V; Gatt, R; Langouche, G; Loureiro, SM; Lourenco, AA; Marques, JG; Melo, AA; von Papen, T; Ramos, AR ; Senateur, JP; da Silva, MF; ...Mais
PUBLICAÇÃO: 1999, FONTE: Workshop on Ion and Slow Positron Beam Utilisation in PROCEEDINGS OF THE WORKSHOP ON ION AND SLOW POSITRON BEAM UTILISATION
AUTORES: Correia, JG; Alves, E ; Amaral, VS; Araujo, JP ; Bordet, P; Butz, T; Capponi, JJ; Ctortecka, B; Le Floch, S; Galindo, V; Gatt, R; Langouche, G; Loureiro, SM; Lourenco, AA; Marques, JG; Melo, AA; von Papen, T; Ramos, AR ; Senateur, JP; da Silva, MF; ...Mais
PUBLICAÇÃO: 1999, FONTE: Workshop on Ion and Slow Positron Beam Utilisation in PROCEEDINGS OF THE WORKSHOP ON ION AND SLOW POSITRON BEAM UTILISATION
INDEXADO EM: WOS
WOS NO MEU: ORCID | ResearcherID
ORCID | ResearcherID44
TÃTULO: Lattice location of implanted Cu in Si Full Text
AUTORES: Wahl, U; Correia, JG ; Vantomme, A; Langouche, G;
PUBLICAÇÃO: 1999, FONTE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4
AUTORES: Wahl, U; Correia, JG ; Vantomme, A; Langouche, G;
PUBLICAÇÃO: 1999, FONTE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4
INDEXADO EM: 
Scopus WOS
Scopus WOS NO MEU: ResearcherID
ResearcherID45
TÃTULO: Li-defect reactions during low dose ion implantation of Li-8 into ZnSe single crystals
AUTORES: Restle, M; Dalmer, M; Wahl, U; Hofsass, H;
PUBLICAÇÃO: 1999, FONTE: Symposium on Microstructural Processes in Irradiated Materials, at the 1998 Fall MRS Meeting in MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, VOLUME: 540
AUTORES: Restle, M; Dalmer, M; Wahl, U; Hofsass, H;
PUBLICAÇÃO: 1999, FONTE: Symposium on Microstructural Processes in Irradiated Materials, at the 1998 Fall MRS Meeting in MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, VOLUME: 540
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ORCID | ResearcherID
ORCID | ResearcherID46
TÃTULO: The influence of oxygen on the lattice sites of rare earths in silicon
AUTORES: Wahl, U; Vantomme, A; Langouche, G; Correia, JG;
PUBLICAÇÃO: 1999, FONTE: Symposium B on Light Emission from Silicon - Progress Towards Si-based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society in LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, VOLUME: 77
AUTORES: Wahl, U; Vantomme, A; Langouche, G; Correia, JG;
PUBLICAÇÃO: 1999, FONTE: Symposium B on Light Emission from Silicon - Progress Towards Si-based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society in LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, VOLUME: 77
INDEXADO EM: WOS
WOS NO MEU: ORCID | ResearcherID
ORCID | ResearcherID47
TÃTULO: Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111) Full Text
AUTORES: Vantomme, A; Wu, MF; Hogg, S; Wahl, U; Deweerd, W; Pattyn, H; Langouche, G; Jin, S; Bender, H;
PUBLICAÇÃO: 1999, FONTE: Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, at the Spring Meeting of the European-Materials-Research-Society in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 147, NÚMERO: 1-4
AUTORES: Vantomme, A; Wu, MF; Hogg, S; Wahl, U; Deweerd, W; Pattyn, H; Langouche, G; Jin, S; Bender, H;
PUBLICAÇÃO: 1999, FONTE: Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, at the Spring Meeting of the European-Materials-Research-Society in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 147, NÚMERO: 1-4
48
TÃTULO: Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSe Full Text
AUTORES: Bharuth Ram, K; Restle, M; Hofsass, H; Ronning, C; Wahl, U;
PUBLICAÇÃO: 1999, FONTE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4
AUTORES: Bharuth Ram, K; Restle, M; Hofsass, H; Ronning, C; Wahl, U;
PUBLICAÇÃO: 1999, FONTE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ResearcherID
ResearcherID49
TÃTULO: Lattice sites and damage annealing of Er in low-dose implanted GaAs Full Text
AUTORES: Wahl, U; Vantomme, A; Langouche, G;
PUBLICAÇÃO: 1999, FONTE: 11th International Conference on Ion Beam Modification of Materials (IBMM98) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 148, NÚMERO: 1-4
AUTORES: Wahl, U; Vantomme, A; Langouche, G;
PUBLICAÇÃO: 1999, FONTE: 11th International Conference on Ion Beam Modification of Materials (IBMM98) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 148, NÚMERO: 1-4
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID50
TÃTULO: Emission channeling studies of defect annealing in the wide band gap semiconductors ZnTe and ZnSe Full Text
AUTORES: Bharuth Ram, K; Hofsass, H; Restle, M; Wahl, U;
PUBLICAÇÃO: 1999, FONTE: International Conference on Swift Heavy Ions in Materials Engineering and Characterization in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 156, NÚMERO: 1-4
AUTORES: Bharuth Ram, K; Hofsass, H; Restle, M; Wahl, U;
PUBLICAÇÃO: 1999, FONTE: International Conference on Swift Heavy Ions in Materials Engineering and Characterization in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 156, NÚMERO: 1-4
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ResearcherID
ResearcherID