Ulrich Wahl
AuthID: R-000-HB1
61
TÃTULO: Emission channeling studies of Li in semiconductors
AUTORES: Wahl, U;
PUBLICAÇÃO: 1997, FONTE: PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, VOLUME: 280, NÚMERO: 3-4
AUTORES: Wahl, U;
PUBLICAÇÃO: 1997, FONTE: PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, VOLUME: 280, NÚMERO: 3-4
62
TÃTULO: Channeled ion beam synthesis of erbium silicide: Comparison of experimental studies and binary collision simulations Full Text
AUTORES: Wahl, U; Vantomme, A; Wu, MF; Pattyn, H; Langouche, G;
PUBLICAÇÃO: 1997, FONTE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127
AUTORES: Wahl, U; Vantomme, A; Wu, MF; Pattyn, H; Langouche, G;
PUBLICAÇÃO: 1997, FONTE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127
NO MEU: 
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ORCID | ResearcherID63
TÃTULO: Direct evidence for stability of tetrahedral interstitial Er in Si up to 900 degrees C
AUTORES: Wahl, U; Correia, JG; Langouche, G; Marques, JG;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2
AUTORES: Wahl, U; Correia, JG; Langouche, G; Marques, JG;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2
INDEXADO EM: WOS
WOS NO MEU: ResearcherID
ResearcherID64
TÃTULO: alpha-emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 23-27, 1995)
AUTORES: DeWachter, J; Blasser, S; Hofsass, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; VanDuppen, P; Langouche, G;
PUBLICAÇÃO: 1996, FONTE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS
AUTORES: DeWachter, J; Blasser, S; Hofsass, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; VanDuppen, P; Langouche, G;
PUBLICAÇÃO: 1996, FONTE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS
INDEXADO EM: WOS
WOS NO MEU: ResearcherID
ResearcherID65
TÃTULO: Thermal stability of substitutional ag in CdTe Full Text
AUTORES: Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U;
PUBLICAÇÃO: 1996, FONTE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, NÚMERO: 1-4
AUTORES: Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U;
PUBLICAÇÃO: 1996, FONTE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, NÚMERO: 1-4
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID66
TÃTULO: Lattice sites of Li in CdTe Full Text
AUTORES: Restle, M; BharuthRam, K; Quintel, H; Ronning, C; Hofsass, H; Wahl, U; Jahn, SG;
PUBLICAÇÃO: 1996, FONTE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, NÚMERO: 1-4
AUTORES: Restle, M; BharuthRam, K; Quintel, H; Ronning, C; Hofsass, H; Wahl, U; Jahn, SG;
PUBLICAÇÃO: 1996, FONTE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, NÚMERO: 1-4
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID67
TÃTULO: Alpha-emission channeling investigations of the lattice location of Li in Ge Full Text
AUTORES: Wahl, U; Jahn, SG; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Hofsass, H;
PUBLICAÇÃO: 1996, FONTE: 12th International Conference on Ion Beam Analysis (IBA-12) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 118, NÚMERO: 1-4
AUTORES: Wahl, U; Jahn, SG; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Hofsass, H;
PUBLICAÇÃO: 1996, FONTE: 12th International Conference on Ion Beam Analysis (IBA-12) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 118, NÚMERO: 1-4
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID68
TÃTULO: Channeled ion beam synthesis: A new technique for forming high-quality rare-earth silicides Full Text
AUTORES: Vantomme, A; Wu, MF; Wahl, U; DeWachter, J; Degroote, S; Pattyn, H; Langouche, G; Bender, H;
PUBLICAÇÃO: 1996, FONTE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, NÚMERO: 1-4
AUTORES: Vantomme, A; Wu, MF; Wahl, U; DeWachter, J; Degroote, S; Pattyn, H; Langouche, G; Bender, H;
PUBLICAÇÃO: 1996, FONTE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, NÚMERO: 1-4
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID69
TÃTULO: LATTICE SITE CHANGES OF ION-IMPLANTED LI IN ZNSE Full Text
AUTORES: JAHN, SG; HOFSASS, H; RESTLE, M; RONNING, C; TROJAHN, I; WAHL, U; WIENECKE, M;
PUBLICAÇÃO: 1995, FONTE: SOLID STATE COMMUNICATIONS, VOLUME: 93, NÚMERO: 5
AUTORES: JAHN, SG; HOFSASS, H; RESTLE, M; RONNING, C; TROJAHN, I; WAHL, U; WIENECKE, M;
PUBLICAÇÃO: 1995, FONTE: SOLID STATE COMMUNICATIONS, VOLUME: 93, NÚMERO: 5
INDEXADO EM: WOS
WOS NO MEU: ResearcherID
ResearcherID70
TÃTULO: LATTICE SITES OF ION-IMPLANTED LI IN DIAMOND Full Text
AUTORES: RESTLE, M; BHARUTHRAM, K; QUINTEL, H; RONNING, C; HOFSASS, H; JAHN, SG; WAHL, U;
PUBLICAÇÃO: 1995, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 66, NÚMERO: 20
AUTORES: RESTLE, M; BHARUTHRAM, K; QUINTEL, H; RONNING, C; HOFSASS, H; JAHN, SG; WAHL, U;
PUBLICAÇÃO: 1995, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 66, NÚMERO: 20
INDEXADO EM: 
Scopus WOS
Scopus WOS NO MEU: ORCID | ResearcherID
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