Alexandra Inês Sarabando de Carvalho
AuthID: R-000-K6Q
41
TÃTULO: Ab initio modeling of defect levels in Ge clusters and supercells Full Text
AUTORES: Coutinho, J ; Torres, VJB ; Carvalho, A; Jones, R; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
AUTORES: Coutinho, J ; Torres, VJB ; Carvalho, A; Jones, R; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
42
TÃTULO: Studies of the VO centre in Ge using first principles cluster calculations Full Text
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Shaw, M; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Shaw, M; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
43
TÃTULO: First-principles investigation of a bistable boron-oxygen interstitial pair in Si
AUTORES: Carvalho, A; Jones, R; Sanati, M; Estreicher, SK; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: PHYSICAL REVIEW B, VOLUME: 73, NÚMERO: 24
AUTORES: Carvalho, A; Jones, R; Sanati, M; Estreicher, SK; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: PHYSICAL REVIEW B, VOLUME: 73, NÚMERO: 24
44
TÃTULO: Calculation of deep carrier traps in a divacancy in germanium crystals Full Text
AUTORES: Coutinho, J ; Torres, VJB ; Jones, R; Carvalho, A; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 88, NÚMERO: 9
AUTORES: Coutinho, J ; Torres, VJB ; Jones, R; Carvalho, A; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 88, NÚMERO: 9
45
TÃTULO: Density-functional study of small interstitial clusters in Si: Comparison with experiments
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: PHYSICAL REVIEW B, VOLUME: 72, NÚMERO: 15
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: PHYSICAL REVIEW B, VOLUME: 72, NÚMERO: 15
46
TÃTULO: Ab initio calculation of the local vibrational modes of the interstitial boron-interstitial oxygen defect in Si Full Text
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, NÚMERO: 17
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, NÚMERO: 17
47
TÃTULO: Ab-initio studies of local vibrations of small self-interstitial aggregates in silicon
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
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