Maria Alexandra Lopes da Fonseca
AuthID: R-000-KNT
31
TÃTULO: Optical and structural study of Ge/Si quantum dots on Si(100) surface covered with a thin silicon oxide layer Full Text
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2005, FONTE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, NÚMERO: SUPPL.
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2005, FONTE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, NÚMERO: SUPPL.
NO MEU: 
ORCID | 
ResearcherID
ORCID | ResearcherID32
TÃTULO: Beyond single scattering off flat samples Full Text
AUTORES: Barradas, NP ; Fonseca, A; Franco, N; Alves, E ;
PUBLICAÇÃO: 2005, FONTE: 18th International Conference on Application of Accelerators in Research and Industry (CAARI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 241, NÚMERO: 1-4
AUTORES: Barradas, NP ; Fonseca, A; Franco, N; Alves, E ;
PUBLICAÇÃO: 2005, FONTE: 18th International Conference on Application of Accelerators in Research and Industry (CAARI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 241, NÚMERO: 1-4
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID33
TÃTULO: High resolution backscattering studies of nanostructured magnetic and semiconducting materials Full Text
AUTORES: Fonseca, A; Franco, N; Alves, E ; Barradas, NP ; Leitao, JP ; Sobolev, NA; Banhart, DF; Presting, H; Ulyanov, VV; Nikiforov, AI;
PUBLICAÇÃO: 2005, FONTE: 18th International Conference on Application of Accelerators in Research and Industry (CAARI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 241, NÚMERO: 1-4
AUTORES: Fonseca, A; Franco, N; Alves, E ; Barradas, NP ; Leitao, JP ; Sobolev, NA; Banhart, DF; Presting, H; Ulyanov, VV; Nikiforov, AI;
PUBLICAÇÃO: 2005, FONTE: 18th International Conference on Application of Accelerators in Research and Industry (CAARI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 241, NÚMERO: 1-4
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID34
TÃTULO: Rutherford backscattering and X-ray reflectivity analysis of tunnel barriers Full Text
AUTORES: Franco, N; Yavorovskiy, IV; Fonseca, A; Gouveia, JAA; Marques, C; Alves, E ; Ferreira, RA; Freitas, PP ; Barradas, NP ;
PUBLICAÇÃO: 2005, FONTE: 8th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 240, NÚMERO: 1-2
AUTORES: Franco, N; Yavorovskiy, IV; Fonseca, A; Gouveia, JAA; Marques, C; Alves, E ; Ferreira, RA; Freitas, PP ; Barradas, NP ;
PUBLICAÇÃO: 2005, FONTE: 8th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 240, NÚMERO: 1-2
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID35
TÃTULO: Low-temperature molecular beam epitaxy of Ge on Si Full Text
AUTORES: Leitao, JP ; Fonseca, A; Sobolev, NA; Carmo, MC; Franco, N; Sequeira, AD; Burbaev, TM; Kurbatov, VA; Rzaev, MM; Pogosov, AO; Sibeldin, NN; Tsvetkov, VA; Lichtenberger, H; Schaffler, F;
PUBLICAÇÃO: 2005, FONTE: 2nd International SiGe Technology and Device Meeting (ISTDM) in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 8, NÚMERO: 1-3
AUTORES: Leitao, JP ; Fonseca, A; Sobolev, NA; Carmo, MC; Franco, N; Sequeira, AD; Burbaev, TM; Kurbatov, VA; Rzaev, MM; Pogosov, AO; Sibeldin, NN; Tsvetkov, VA; Lichtenberger, H; Schaffler, F;
PUBLICAÇÃO: 2005, FONTE: 2nd International SiGe Technology and Device Meeting (ISTDM) in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 8, NÚMERO: 1-3
INDEXADO EM: 
Scopus WOS
Scopus WOS NO MEU: ResearcherID
ResearcherID36
TÃTULO: Low-temperature molecular beam epitaxy of Ge on Si Full Text
AUTORES: J.P Leitão; Fonseca, A; N.A Sobolev; M.C Carmo; Franco, N; A.D Sequeira; T.M Burbaev; V.A Kurbatov; M.M Rzaev; A.O Pogosov; N.N Sibeldin; V.A Tsvetkov; Lichtenberger, H; Schäffler, F;
PUBLICAÇÃO: 2005, FONTE: Materials Science in Semiconductor Processing, VOLUME: 8, NÚMERO: 1-3
AUTORES: J.P Leitão; Fonseca, A; N.A Sobolev; M.C Carmo; Franco, N; A.D Sequeira; T.M Burbaev; V.A Kurbatov; M.M Rzaev; A.O Pogosov; N.N Sibeldin; V.A Tsvetkov; Lichtenberger, H; Schäffler, F;
PUBLICAÇÃO: 2005, FONTE: Materials Science in Semiconductor Processing, VOLUME: 8, NÚMERO: 1-3
37
TÃTULO: An expeditious experiment to determine the Faraday constant Full Text
AUTORES: Gomes, MTSR ; Oliveira, MMO; Fonseca, MA; Oliveira, JABP ;
PUBLICAÇÃO: 2004, FONTE: JOURNAL OF CHEMICAL EDUCATION, VOLUME: 81, NÚMERO: 1
AUTORES: Gomes, MTSR ; Oliveira, MMO; Fonseca, MA; Oliveira, JABP ;
PUBLICAÇÃO: 2004, FONTE: JOURNAL OF CHEMICAL EDUCATION, VOLUME: 81, NÚMERO: 1
INDEXADO EM: Scopus WOS
Scopus WOS38
TÃTULO: Pulsed laser annealing of Si-Ge superlattices Full Text
AUTORES: Sobolev, NA; Ivlev, GD; Gatskevich, EI; Leitao, JP ; Fonseca, A; Carmo, MC; Lopes, AB ; Sharaev, DN; Kibbel, H; Presting, H;
PUBLICAÇÃO: 2003, FONTE: Spring Meeting of the European-Materials-Research-Society (E-MRS) in MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, VOLUME: 23, NÚMERO: 1-2
AUTORES: Sobolev, NA; Ivlev, GD; Gatskevich, EI; Leitao, JP ; Fonseca, A; Carmo, MC; Lopes, AB ; Sharaev, DN; Kibbel, H; Presting, H;
PUBLICAÇÃO: 2003, FONTE: Spring Meeting of the European-Materials-Research-Society (E-MRS) in MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, VOLUME: 23, NÚMERO: 1-2
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID39
TÃTULO: Influence of defects on the luminescence of Ge/Si quantum dots Full Text
AUTORES: Sobolev, NA; Fonseca, A; Leitao, JP ; Carmo, MC; Presting, H; Kibbel, H;
PUBLICAÇÃO: 2003, FONTE: 2nd International Conference on Semiconductor Quantum Dots in 2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, NÚMERO: 4
AUTORES: Sobolev, NA; Fonseca, A; Leitao, JP ; Carmo, MC; Presting, H; Kibbel, H;
PUBLICAÇÃO: 2003, FONTE: 2nd International Conference on Semiconductor Quantum Dots in 2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, NÚMERO: 4
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID40
TÃTULO: Ultramicrohardness cross-profiling of CVD diamond steel brazed junctions Full Text
AUTORES: Fernandes, AJS; Fonseca, MJ; Costa, FM ; Silva, RF ; Nazare, MH;
PUBLICAÇÃO: 1999, FONTE: 9th European Conference on Diamond, Diamond-like Materials, Nitrides and Silicon Carbide (Diamond 1998) in DIAMOND AND RELATED MATERIALS, VOLUME: 8, NÚMERO: 2-5
AUTORES: Fernandes, AJS; Fonseca, MJ; Costa, FM ; Silva, RF ; Nazare, MH;
PUBLICAÇÃO: 1999, FONTE: 9th European Conference on Diamond, Diamond-like Materials, Nitrides and Silicon Carbide (Diamond 1998) in DIAMOND AND RELATED MATERIALS, VOLUME: 8, NÚMERO: 2-5
