Low-Temperature Molecular Beam Epitaxy of Ge on Si

AuthID
 P-000-4XM
14
Author(s)
Sobolev, NA
·
Carmo, MC
·
Sequeira, AD
·
Burbaev, TM
·
Kurbatov, VA
·
Rzaev, MM
·
Pogosov, AO
·
Sibeldin, NN
·
Tsvetkov, VA
·
Lichtenberger, H
·
Schaffler, F
Tipo de Documento
Article
Year published
2005
Publicado
in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ISSN: 1369-8001
Volume: 8, Número: 1-3, Páginas: 35-39 (5)
Conference
2Nd International Sige Technology and Device Meeting (Istdm), Date: MAY 16-19, 2004, Location: Frankfurt, GERMANY
Indexing
Wos®
Scopus®
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-19944430351
Wos: WOS:000227056200008
Source Identifiers
ISSN: 1369-8001
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service