Patrick R. Briddon
AuthID: R-006-MRG
91
TÃTULO: Local vibrational mode bands of V-O-H complexes in silicon Full Text
AUTORES: Markevich, VP; Murin, LI; Suezawa, M; Lindstrom, JL; Coutinho, J ; Jones, R; Briddon, PR; Oberg, S;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) in Physica B: Condensed Matter, VOLUME: 273-274
AUTORES: Markevich, VP; Murin, LI; Suezawa, M; Lindstrom, JL; Coutinho, J ; Jones, R; Briddon, PR; Oberg, S;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) in Physica B: Condensed Matter, VOLUME: 273-274
92
TÃTULO: Nitrogen-hydrogen defects in GaP Full Text
AUTORES: Dixon, P; Richardson, D; Jones, R; Latham, CD; Oberg, S; Torres, VJB ; Briddon, PR;
PUBLICAÇÃO: 1998, FONTE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, NÚMERO: 2
AUTORES: Dixon, P; Richardson, D; Jones, R; Latham, CD; Oberg, S; Torres, VJB ; Briddon, PR;
PUBLICAÇÃO: 1998, FONTE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, NÚMERO: 2
93
TÃTULO: Theory of nitrogen aggregates in diamond: The H3 and H4 defects
AUTORES: Jones, R; Torres, VJB; Briddon, PR; Oberg, S;
PUBLICAÇÃO: 1994, FONTE: Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) in Materials Science Forum, VOLUME: 143-4, NÚMERO: pt 1
AUTORES: Jones, R; Torres, VJB; Briddon, PR; Oberg, S;
PUBLICAÇÃO: 1994, FONTE: Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) in Materials Science Forum, VOLUME: 143-4, NÚMERO: pt 1
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