Patrick R. Briddon
AuthID: R-006-MRG
41
TÃTULO: Ab-initio modeling of carbon and carbon-hydrogen defects in InAs Full Text
AUTORES: Torres, VJB ; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
AUTORES: Torres, VJB ; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
42
TÃTULO: Self-interstitials and Frenkel pairs in electron-irradiated germanium Full Text
AUTORES: Carvalho, A; Jones, R; Goss, J; Janke, C; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
AUTORES: Carvalho, A; Jones, R; Goss, J; Janke, C; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
43
TÃTULO: Self-interstitial in germanium
AUTORES: Carvalho, A; Jones, R; Janke, C; Goss, JP; Briddon, PR; Coutinho, J ; Oeberg, S;
PUBLICAÇÃO: 2007, FONTE: PHYSICAL REVIEW LETTERS, VOLUME: 99, NÚMERO: 17
AUTORES: Carvalho, A; Jones, R; Janke, C; Goss, JP; Briddon, PR; Coutinho, J ; Oeberg, S;
PUBLICAÇÃO: 2007, FONTE: PHYSICAL REVIEW LETTERS, VOLUME: 99, NÚMERO: 17
44
TÃTULO: Early stage donor-vacancy clusters in germanium Full Text
AUTORES: Jose Coutinho ; Vitor J B Torres ; Sven Oberg; Alexandra Carvalho; Colin Janke; Robert Jones; Patrick R Briddon;
PUBLICAÇÃO: 2007, FONTE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, NÚMERO: 7
AUTORES: Jose Coutinho ; Vitor J B Torres ; Sven Oberg; Alexandra Carvalho; Colin Janke; Robert Jones; Patrick R Briddon;
PUBLICAÇÃO: 2007, FONTE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, NÚMERO: 7
45
TÃTULO: Oxygen defects in irradiated germanium Full Text
AUTORES: Carvalho, A; Jones, R; Torres, VJB ; Coutinho, J ; Markevich, V; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, NÚMERO: 7
AUTORES: Carvalho, A; Jones, R; Torres, VJB ; Coutinho, J ; Markevich, V; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, NÚMERO: 7
46
TÃTULO: Local-density-functional calculations of the vacancy-oxygen center in Ge
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Oberg, S; Campanera M C Alsina; Shaw, M; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: PHYSICAL REVIEW B, VOLUME: 75, NÚMERO: 11
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Oberg, S; Campanera M C Alsina; Shaw, M; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: PHYSICAL REVIEW B, VOLUME: 75, NÚMERO: 11
47
TÃTULO: Ab initio modeling of defect levels in Ge clusters and supercells Full Text
AUTORES: Coutinho, J ; Torres, VJB ; Carvalho, A; Jones, R; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
AUTORES: Coutinho, J ; Torres, VJB ; Carvalho, A; Jones, R; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
48
TÃTULO: Supercell and cluster density functional calculations of the thermal stability of the divacancy in germanium Full Text
AUTORES: Janke, C; Jones, R; Coutinho, J ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
AUTORES: Janke, C; Jones, R; Coutinho, J ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
49
TÃTULO: Studies of the VO centre in Ge using first principles cluster calculations Full Text
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Shaw, M; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Shaw, M; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
50
TÃTULO: Formation energy and migration barrier of a Ge vacancy from ab initio studies Full Text
AUTORES: Pinto, HM; Coutinho, J ; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
AUTORES: Pinto, HM; Coutinho, J ; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
