P. L. F. Hemment
AuthID: R-007-21T
1
TÃTULO: Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis
AUTORES: Nejim, A; Cristiano, F; Knights, AP; Barradas, NP ; Hemment, PLF; Coleman, PG;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) in Proceedings of the International Conference on Ion Implantation Technology, VOLUME: 2
AUTORES: Nejim, A; Cristiano, F; Knights, AP; Barradas, NP ; Hemment, PLF; Coleman, PG;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) in Proceedings of the International Conference on Ion Implantation Technology, VOLUME: 2
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