241
TITLE: Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors
AUTHORS: Tobias Cramer; Allegra Sacchetti; Maria Teresa Lobato; Pedro Barquinha; Vincent Fischer; Mohamed Benwadih; Jacqueline Bablet; Elvira Fortunato; Rodrigo Martins; Beatrice Fraboni;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef
242
TITLE: Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors  Full Text
AUTHORS: Asal Kiazadeh; Henrique L Gomes; Pedro Barquinha; Jorge Martins; Ana Rovisco; Joana V Pinto; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 109, ISSUE: 5
INDEXED IN: Scopus WOS CrossRef
243
TITLE: Novel Linear Analog-Adder Using a-IGZO TFTs
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Elvira Fortunato; Rodrigo Martins; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: IEEE International Symposium on Circuits and Systems (ISCAS) in 2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLUME: 2016-July
INDEXED IN: Scopus WOS CrossRef
244
TITLE: Basic Analog and Digital Circuits with a-IGZO TFTs
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Tavares ; Pedro Barquinha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) in 2016 13TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN (SMACD)
INDEXED IN: Scopus WOS CrossRef: 2
246
TITLE: Validating silicon polytrodes with paired juxtacellular recordings: method and dataset
AUTHORS: Joana P Neto; Gonalo Lopes; Joao Frazao; Joana Nogueira; Pedro Lacerda; Pedro Baiao; Arno Aarts; Alexandru Andrei; Silke Musa; Elvira Fortunato; Pedro Barquinha; Adam R Kampff;
PUBLISHED: 2016, SOURCE: JOURNAL OF NEUROPHYSIOLOGY, VOLUME: 116, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef
247
TITLE: Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress  Full Text
AUTHORS: Jong Woo Jin; Arokia Nathan; Pedro Barquinha; Luis Pereira; Elvira Fortunato; Rodrigo Martins; Brian Cobb;
PUBLISHED: 2016, SOURCE: AIP ADVANCES, VOLUME: 6, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef
248
TITLE: Solid State Electrochemical WO3 Transistors with High Current Modulation
AUTHORS: Paul Grey; Luis Pereira; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: ADVANCED ELECTRONIC MATERIALS, VOLUME: 2, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef
249
TITLE: High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric
AUTHORS: Fukai K Shan; Ao Liu; Huihui H Zhu; Weijin J Kong; Jingquan Q Liu; Byoungchul C Shin; Elvira Fortunato; Rodrigo Martins; Guoxia X Liu;
PUBLISHED: 2016, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 4, ISSUE: 40
INDEXED IN: Scopus WOS
250
TITLE: The 2016 oxide electronic materials and oxide interfaces roadmap  Full Text
AUTHORS: Lorenz, M; Ramachandra S R Rao; Venkatesan, T; Fortunato, E; Barquinha, P; Branquinho, R; Salgueiro, D; Martins, R; Carlos, E; Liu, A; Shan, FK; Grundmann, M; Boschker, H; Mukherjee, J; Priyadarshini, M; DasGupta, N; Rogers, DJ; Teherani, FH; Sandana, EV; Bove, P; Rietwyk, K; Zaban, A; Veziridis, A; Weidenkaff, A; Muralidhar, M; Murakami, M; Abel, S; Fompeyrine, J; Zuniga Perez, J; Ramesh, R; Spaldin, NA; Ostanin, S; Borisov, V; Mertig, I; Lazenka, V; Srinivasan, G; Prellier, W; Uchida, M; Kawasaki, M; Pentcheva, R; Gegenwart, P; Miletto M Granozio; Fontcuberta, J; Pryds, N; ...More
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 43
INDEXED IN: Scopus WOS
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