Robert Francis Jones
AuthID: R-001-FHB
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TÃTULO: Identification of stable and metastable forms of VO2 centers in germanium Full Text
AUTORES: Carvalho, A; Torres, VJB ; Markevich, VP; Coutinho, J ; Litvinov, VV; Peaker, AR; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
AUTORES: Carvalho, A; Torres, VJB ; Markevich, VP; Coutinho, J ; Litvinov, VV; Peaker, AR; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
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TÃTULO: Self-interstitials and Frenkel pairs in electron-irradiated germanium Full Text
AUTORES: Carvalho, A; Jones, R; Goss, J; Janke, C; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
AUTORES: Carvalho, A; Jones, R; Goss, J; Janke, C; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
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TÃTULO: Self-interstitial in germanium
AUTORES: Carvalho, A; Jones, R; Janke, C; Goss, JP; Briddon, PR; Coutinho, J ; Oeberg, S;
PUBLICAÇÃO: 2007, FONTE: PHYSICAL REVIEW LETTERS, VOLUME: 99, NÚMERO: 17
AUTORES: Carvalho, A; Jones, R; Janke, C; Goss, JP; Briddon, PR; Coutinho, J ; Oeberg, S;
PUBLICAÇÃO: 2007, FONTE: PHYSICAL REVIEW LETTERS, VOLUME: 99, NÚMERO: 17
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TÃTULO: Early stage donor-vacancy clusters in germanium Full Text
AUTORES: Jose Coutinho ; Vitor J B Torres ; Sven Oberg; Alexandra Carvalho; Colin Janke; Robert Jones; Patrick R Briddon;
PUBLICAÇÃO: 2007, FONTE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, NÚMERO: 7
AUTORES: Jose Coutinho ; Vitor J B Torres ; Sven Oberg; Alexandra Carvalho; Colin Janke; Robert Jones; Patrick R Briddon;
PUBLICAÇÃO: 2007, FONTE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, NÚMERO: 7
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TÃTULO: Oxygen defects in irradiated germanium Full Text
AUTORES: Carvalho, A; Jones, R; Torres, VJB ; Coutinho, J ; Markevich, V; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, NÚMERO: 7
AUTORES: Carvalho, A; Jones, R; Torres, VJB ; Coutinho, J ; Markevich, V; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, NÚMERO: 7
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TÃTULO: Local-density-functional calculations of the vacancy-oxygen center in Ge
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Oberg, S; Campanera M C Alsina; Shaw, M; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: PHYSICAL REVIEW B, VOLUME: 75, NÚMERO: 11
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Oberg, S; Campanera M C Alsina; Shaw, M; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: PHYSICAL REVIEW B, VOLUME: 75, NÚMERO: 11
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TÃTULO: Ab-initio modeling of defects in germanium
AUTORES: Jones, R; Coutinho, JA ;
PUBLICAÇÃO: 2007, FONTE: Germanium-Based Technologies
AUTORES: Jones, R; Coutinho, JA ;
PUBLICAÇÃO: 2007, FONTE: Germanium-Based Technologies
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TÃTULO: Ab initio modeling of defect levels in Ge clusters and supercells Full Text
AUTORES: Coutinho, J ; Torres, VJB ; Carvalho, A; Jones, R; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
AUTORES: Coutinho, J ; Torres, VJB ; Carvalho, A; Jones, R; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
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TÃTULO: Supercell and cluster density functional calculations of the thermal stability of the divacancy in germanium Full Text
AUTORES: Janke, C; Jones, R; Coutinho, J ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
AUTORES: Janke, C; Jones, R; Coutinho, J ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
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TÃTULO: Studies of the VO centre in Ge using first principles cluster calculations Full Text
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Shaw, M; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Shaw, M; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
