B. E. Sernelius
AuthID: R-00F-D5A
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TÃTULO: Free electron behavior in InN: On the role of dislocations and surface electron accumulation Full Text
AUTORES: Darakchieva, V; Hofmann, T; Schubert, M; Sernelius, BE; Monemar, B; Persson, POA; Giuliani, F; Alves, E ; Lu, H; Schaff, WJ;
PUBLICAÇÃO: 2009, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 94, NÚMERO: 2
AUTORES: Darakchieva, V; Hofmann, T; Schubert, M; Sernelius, BE; Monemar, B; Persson, POA; Giuliani, F; Alves, E ; Lu, H; Schaff, WJ;
PUBLICAÇÃO: 2009, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 94, NÚMERO: 2
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TÃTULO: Unravelling the free electron behavior in InN Full Text
AUTORES: Darakchieva, V; Hofmann, T; Schubert, M; Sernelius, BE; Giuliani, F; Y Xie; Persson, POA; Monemar, B; Schaff, WJ; L Hsiao; C Chen; Nanishi, Y;
PUBLICAÇÃO: 2008, FONTE: Conference on Optoelectronic and Microelectronic Materials and Devices in COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES
AUTORES: Darakchieva, V; Hofmann, T; Schubert, M; Sernelius, BE; Giuliani, F; Y Xie; Persson, POA; Monemar, B; Schaff, WJ; L Hsiao; C Chen; Nanishi, Y;
PUBLICAÇÃO: 2008, FONTE: Conference on Optoelectronic and Microelectronic Materials and Devices in COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES
