A. V. Zdoroveishev
AuthID: R-00F-KAG
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TÃTULO: Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy Full Text
AUTORES: Levichev, S ; Volkova, NS; Gorshkov, AP; Zdoroveishev, AV; Vikhrova, OV; Utsyna, EV; Istomin, LA; Zvonkov, BN;
PUBLICAÇÃO: 2014, FONTE: JOURNAL OF LUMINESCENCE, VOLUME: 147
AUTORES: Levichev, S ; Volkova, NS; Gorshkov, AP; Zdoroveishev, AV; Vikhrova, OV; Utsyna, EV; Istomin, LA; Zvonkov, BN;
PUBLICAÇÃO: 2014, FONTE: JOURNAL OF LUMINESCENCE, VOLUME: 147
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TÃTULO: Investigation of the buried InAs/GaAs quantum dots by atomic force microscopy combined with selective chemical etching
AUTORES: Karpovich, IA; Baidus, NV; Zvonkov, BN; Filatov, DO; Levichev, SB; Zdoroveishev, AV; Perevoshikov, VA;
PUBLICAÇÃO: 2001, FONTE: Scanning Probe Microscopy 2001 Workshop in PHYSICS OF LOW-DIMENSIONAL STRUCTURES, VOLUME: 3-4
AUTORES: Karpovich, IA; Baidus, NV; Zvonkov, BN; Filatov, DO; Levichev, SB; Zdoroveishev, AV; Perevoshikov, VA;
PUBLICAÇÃO: 2001, FONTE: Scanning Probe Microscopy 2001 Workshop in PHYSICS OF LOW-DIMENSIONAL STRUCTURES, VOLUME: 3-4
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