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TÍTULO: Extremely uniform InAs/GaAs quantum dots emitting at 1.46 mkm at room temperature grown by MOCVD with Bi doping
AUTORES: Zvonkov, BN; Karpovich, IA; Baidus, NV; Filatov, DO; Gushina, YY; Morozov, SV; Levichev, SB;
PUBLICAÇÃO: 2001, FONTE: 25th International Conference on the Physics of Semiconductors (ICPS25) in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, VOLUME: 87
INDEXADO EM: WOS