Zuo Guang Ye
AuthID: R-00F-RBY
1
TÃTULO: Lead free 0.9Na(1/2)Bi(1/2)TiO(3)-0.1BaZr(0.2)Ti(0.8)O(3) thin film with large piezoelectric electrostrain Full Text
AUTORES: Yang, Hao; Zhao, Jinyan; Ren, Wei; Ye, Zuo Guang; Vinayakumar, K. B.; Dias, Rosana A.; Pinto, Rui M. R.; Zhuang, Jian; Zhang, Nan;
PUBLICAÇÃO: 2022, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 121, NÚMERO: 13
AUTORES: Yang, Hao; Zhao, Jinyan; Ren, Wei; Ye, Zuo Guang; Vinayakumar, K. B.; Dias, Rosana A.; Pinto, Rui M. R.; Zhuang, Jian; Zhang, Nan;
PUBLICAÇÃO: 2022, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 121, NÚMERO: 13
INDEXADO EM: 
Scopus 
WOS
Scopus WOS2
TÃTULO: Surface Domain Structures and Mesoscopic Phase Transition in Relaxor Ferroelectrics Full Text
AUTORES: Andrei Kholkin ; Anna Morozovska; Dmitry Kiselev; Igor Bdikin ; Brian Rodriguez; Pingping P Wu; Alexei Bokov; Zuo Guang Ye; Brahim Dkhil; Long Qing Chen; Marija Kosec; Sergei V Kalinin;
PUBLICAÇÃO: 2011, FONTE: ADVANCED FUNCTIONAL MATERIALS, VOLUME: 21, NÚMERO: 11
AUTORES: Andrei Kholkin ; Anna Morozovska; Dmitry Kiselev; Igor Bdikin ; Brian Rodriguez; Pingping P Wu; Alexei Bokov; Zuo Guang Ye; Brahim Dkhil; Long Qing Chen; Marija Kosec; Sergei V Kalinin;
PUBLICAÇÃO: 2011, FONTE: ADVANCED FUNCTIONAL MATERIALS, VOLUME: 21, NÚMERO: 11
3
TÃTULO: Real space mapping of polarization dynamics and hysteresis loop formation in relaxor-ferroelectric PbMg1/3Nb2/3O3-PbTiO3 solid solutions Full Text
AUTORES: Rodriguez, BJ; Jesse, S; Morozovska, AN; Svechnikov, SV; Kiselev, DA; Kholkin, AL ; Bokov, AA; G Ye; Kalinin, SV;
PUBLICAÇÃO: 2010, FONTE: 4th International Workshop and Satellite Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials in JOURNAL OF APPLIED PHYSICS, VOLUME: 108, NÚMERO: 4
AUTORES: Rodriguez, BJ; Jesse, S; Morozovska, AN; Svechnikov, SV; Kiselev, DA; Kholkin, AL ; Bokov, AA; G Ye; Kalinin, SV;
PUBLICAÇÃO: 2010, FONTE: 4th International Workshop and Satellite Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials in JOURNAL OF APPLIED PHYSICS, VOLUME: 108, NÚMERO: 4
