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TÍTULO: Morphological transformation of a germanium layer grown on a silicon surface by molecular-beam epitaxy at low temperatures  Full Text
AUTORES: Burbaev, TM; Kurbatov, VA; Rzaev, MM; Pogosov, AO; Sibel'din, NN; Tsvetkov, VA; Lichtenberger, H; Schaffler, F; Leitao, JP ; Sobolev, NA; Carmo, MC;
PUBLICAÇÃO: 2005, FONTE: Nanophotonics 2004 Workshop in PHYSICS OF THE SOLID STATE, VOLUME: 47, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef: 2