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TÍTULO: Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy  Full Text
AUTORES: Levichev, S ; Volkova, NS; Gorshkov, AP; Zdoroveishev, AV; Vikhrova, OV; Utsyna, EV; Istomin, LA; Zvonkov, BN;
PUBLICAÇÃO: 2014, FONTE: JOURNAL OF LUMINESCENCE, VOLUME: 147
INDEXADO EM: Scopus WOS CrossRef