M. A. Jaud
AuthID: R-00J-02Q
1
TÃTULO: Robust Multi-V-T 4T SRAM Cell in 45nm Thin BOx Fully-Depleted SOI Technology with Ground Plane
AUTORES: Noel, JP; Thomas, O; Fenouillet Beranger, C; Jaud, MA; Amara, A;
PUBLICAÇÃO: 2009, FONTE: International Conference on Integrated Circuit Design and Technology in 2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS
AUTORES: Noel, JP; Thomas, O; Fenouillet Beranger, C; Jaud, MA; Amara, A;
PUBLICAÇÃO: 2009, FONTE: International Conference on Integrated Circuit Design and Technology in 2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS
INDEXADO EM: WOS