J. Bonnouvrier
AuthID: R-00J-D42
1
TÃTULO: Competitive and cost effective high-k based 28nm CMOS technology for low power applications Full Text
AUTORES: Arnaud, F; Thean, A; Eller, M; Lipinski, M; The, YW; Ostermayr, M; Kang, K; Kim, NS; Ohuchi, K; Han, JP; Nair, DR; Lian, J; Uchimura, S; Kohler, S; Miyaki, S; Ferreira, P ; Park, JH; Hamaguchi, M; Miyashita, K; Augur, R; ...Mais
PUBLICAÇÃO: 2009, FONTE: 2009 International Electron Devices Meeting, IEDM 2009 in Technical Digest - International Electron Devices Meeting, IEDM
AUTORES: Arnaud, F; Thean, A; Eller, M; Lipinski, M; The, YW; Ostermayr, M; Kang, K; Kim, NS; Ohuchi, K; Han, JP; Nair, DR; Lian, J; Uchimura, S; Kohler, S; Miyaki, S; Ferreira, P ; Park, JH; Hamaguchi, M; Miyashita, K; Augur, R; ...Mais
PUBLICAÇÃO: 2009, FONTE: 2009 International Electron Devices Meeting, IEDM 2009 in Technical Digest - International Electron Devices Meeting, IEDM
