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TÍTULO: Evaluation of the infrared absorption in nm-thick heavily boron-doped Si1-xGex layers on silicon  Full Text
AUTORES: Cavaco, A; Sobolev, NA; Carmo, MC; Presting, H; Konig, U;
PUBLICAÇÃO: 2001, FONTE: 3rd International Conference on Materials in Microelectronics in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 12, NÚMERO: 4-6
INDEXADO EM: Scopus WOS CrossRef