91
TÍTULO: Radiation tests on commercial instrumentation amplifiers, analog switches & DAC's
AUTORES: Agapito, JA; Barradas, NP ; Cardeira, FM; Casas, J; Fernandes, AP; Franco, FJ; Gomes, P; Goncalves, IC; Cachero, AH; Lozano, J; Marques, JG; Paz, A; Prata, MJ; Ramalho, AJG; Ruiz, MAR; Santos, JP; Vieira, A;
PUBLICAÇÃO: 2001, FONTE: 7th Workshop on Electronics for LHC Experiments in PROCEEDINGS OF THE SEVENTH WORKSHOP ON ELECTRONICS FOR LHC EXPERIMENTS, VOLUME: 2001, NÚMERO: 5
INDEXADO EM: WOS
92
TÍTULO: Local O-delta probing in the high-T-c superconductor HgBa2CuO4+delta
AUTORES: Correia, JG; Araujo, JP ; Loureiro, SM; Toulemonde, P; Le Floch, S; Bordet, P; Capponi, JJ; Gatt, R; Troger, W; Ctortecka, B; Butz, T; Haas, H; Marques, JG; Soares, JC;
PUBLICAÇÃO: 2000, FONTE: PHYSICAL REVIEW B, VOLUME: 61, NÚMERO: 17
INDEXADO EM: WOS CrossRef: 9
93
TÍTULO: Instrumentation amplifiers and voltage controlled current sources for LHC cryogenic instrumentation
AUTORES: Agapito, JA; Barradas, NP ; Cardeira, FM; Casas, J; Fernandes, AP; Franco, FJ; Gomes, P; Goncalves, IC; Cachero, AH; Lozano, J; Martin, MA; Marques, JG; Paz, A; Prata, MJ; Ramalho, AJG; Ruiz, MAR; Santos, JP; Vieira, A;
PUBLICAÇÃO: 2000, FONTE: 6th Workshop on Electronics for LHC Experiments in PROCEEDINGS OF THE SIXTH WORKSHOP ON ELECTRONICS FOR LHC EXPERIMENTS, VOLUME: 2000, NÚMERO: 10
INDEXADO EM: WOS
94
TÍTULO: Combined ion bean and hyperfine interaction studies of LiNbO3 single crystals
AUTORES: Marques, JG; Kling, A; Rebouta, L ; da Silva, MF; Soares, JC;
PUBLICAÇÃO: 1999, FONTE: Workshop on Ion and Slow Positron Beam Utilisation in PROCEEDINGS OF THE WORKSHOP ON ION AND SLOW POSITRON BEAM UTILISATION
INDEXADO EM: WOS
95
TÍTULO: High-T-c superconductors studies with radioactive ion beams at isolde
AUTORES: Correia, JG; Alves, E ; Amaral, VS; Araujo, JP ; Bordet, P; Butz, T; Capponi, JJ; Ctortecka, B; Le Floch, S; Galindo, V; Gatt, R; Langouche, G; Loureiro, SM; Lourenco, AA; Marques, JG; Melo, AA; von Papen, T; Ramos, AR ; Senateur, JP; da Silva, MF; Soares, JC; Sousa, JB; Toulemonde, P; Troger, W; Vantomme, A; Wahl, U; Weiss, F; ...Mais
PUBLICAÇÃO: 1999, FONTE: Workshop on Ion and Slow Positron Beam Utilisation in PROCEEDINGS OF THE WORKSHOP ON ION AND SLOW POSITRON BEAM UTILISATION
INDEXADO EM: WOS
96
TÍTULO: Preliminary test for radiation tolerant electronic components for the LHC cryogenic system.
AUTORES: Agapito, JA; Cardeira, FM; Casas, J; Duarte, A; Fernandes, AP; Franco, FJ; Gil, MJ; Gomes, P; Goncalves, IC; Cachero, AH; Jordung, U; Martin, MA; Marques, JG; Paz, A; Ramalho, AJG; Ruiz, MAR; Santos, JP;
PUBLICAÇÃO: 1999, FONTE: 5th Workshop on Electronics for LHC Experiments in PROCEEDINGS OF THE FIFTH WORKSHOP ON ELECTRONICS FOR LHC EXPERIMENTS
INDEXADO EM: WOS
97
TÍTULO: High flux Fe-56(+) and Fe-57(+) implantations for GMR applications  Full Text
AUTORES: Redondo, LM; de Jesus, CM; Marques, JG; da Silva, MF; Soares, JC; de Azevedo, MMP; Mendes, JA; Rogalski, MS; Sousa, JB ;
PUBLICAÇÃO: 1998, FONTE: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 139, NÚMERO: 1-4
INDEXADO EM: WOS CrossRef
98
TÍTULO: Lattice site location of Hf in LiNbO3: Influence of dopant concentration and crystal stoichiometry  Full Text
AUTORES: Marques, JG; Kling, A ; Soares, JC ; Rebouta, L ; da Silva, MF; Dieguez, E; Agullo Lopez, F;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
INDEXADO EM: Scopus WOS CrossRef
99
TÍTULO: Giant magnetoresistance in iron and cobalt implanted silver thin films
AUTORES: De Jesus, CM; Marques, JG; Soares, JC; Redondo, LM; Da Silva, MF; De Azevedo, MMP; Sousa, JB;
PUBLICAÇÃO: 1998, FONTE: Symposium KK - on Atomistic Mechanisms in Beam Synthesis and Irradiation of Materials at the 1997 MRS Fall Meeting in ATOMISTIC MECHANISMS IN BEAM SYNTHESIS AND IRRADIATION OF MATERIALS, VOLUME: 504
INDEXADO EM: WOS
100
TÍTULO: Direct evidence for stability of tetrahedral interstitial Er in Si up to 900 degrees C
AUTORES: Wahl, U; Correia, JG; Langouche, G; Marques, JG;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2
INDEXADO EM: WOS
Página 10 de 11. Total de resultados: 104.